{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,11,6]],"date-time":"2026-11-06T09:37:47Z","timestamp":1793957867901,"version":"4.8.0"},"reference-count":44,"publisher":"Wiley","issue":"7","license":[{"start":{"date-parts":[[2023,3,16]],"date-time":"2023-03-16T00:00:00Z","timestamp":1678924800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2023,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>In this paper, In<jats:sub>0.22<\/jats:sub>Zn<jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>Sn<jats:sub>0.78\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>O<jats:sub>1.89\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic> (<jats:italic>\u03b4<\/jats:italic> = 0.55) films with a single spinel phase are successfully grown at the low temperature of 300 \u00b0C through careful cation composition design and a catalytic chemical reaction. Thin\u2010film transistors (TFTs) with amorphous In<jats:sub>0<\/jats:sub><jats:sub>.22<\/jats:sub>Zn<jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>Sn<jats:sub>0.78\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>O<jats:sub>1.89\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic> (<jats:italic>\u03b4<\/jats:italic> = 0.55) channel layers have a reasonable mobility of 41.0 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup> due to the synergic intercalation of In and Sn ions. In contrast, TFTs with polycrystalline spinel In<jats:sub>0<\/jats:sub><jats:sub>.22<\/jats:sub>Zn<jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>Sn<jats:sub>0.78\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic>O<jats:sub>1.89\u2212<\/jats:sub><jats:italic><jats:sub><jats:italic>\u03b4<\/jats:italic><\/jats:sub><\/jats:italic> (<jats:italic>\u03b4<\/jats:italic> = 0.55) channel layers, achieved through a metal\u2010induced crystallization at 300 \u00b0C, exhibit a remarkably high field\u2010effect mobility of \u224883.2 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup> and excellent stability against external gate bias stress, which is attributed to the uniform formation of the highly ordered spinel phase. The relationships between cation composition, microstructure, and performance for the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\u2013ZnO\u2013SnO<jats:sub>2<\/jats:sub> ternary component system are investigated rigorously to attain in\u2010depth understanding of the roles of various crystalline phases, including spinel Zn<jats:sub>2\u2212<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>Sn<jats:sub>1\u2212<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>In<jats:sub>2<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>O<jats:sub>4<\/jats:sub> (<jats:italic>y<\/jats:italic> = 0.45), bixbyite In<jats:sub>2\u22122<\/jats:sub><jats:italic><jats:sub>x<\/jats:sub><\/jats:italic>Zn<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic>In<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic>O<jats:sub>4<\/jats:sub> (<jats:italic>x<\/jats:italic> = 0.4), rutile SnO<jats:sub>2<\/jats:sub>, and a homologous compound of compound (ZnO)<jats:italic><jats:sub>k<\/jats:sub><\/jats:italic>(In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>) (<jats:italic>k<\/jats:italic> = 5). This work concludes that the cubic spinel phase of Zn<jats:sub>2\u2212<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>Sn<jats:sub>1\u2212<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>In<jats:sub>2<\/jats:sub><jats:italic><jats:sub>y<\/jats:sub><\/jats:italic>O<jats:sub>4<\/jats:sub> (<jats:italic>y<\/jats:italic> = 0.45) film is a strong contender as a substitute for semiconducting polysilicon as a backplane channel ingredient for mobile active\u2010matrix organic light\u2010emitting diode displays.<\/jats:p>","DOI":"10.1002\/smtd.202201522","type":"journal-article","created":{"date-parts":[[2023,3,16]],"date-time":"2023-03-16T12:18:05Z","timestamp":1678969085000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":42,"title":["High Mobility IZTO Thin\u2010Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction"],"prefix":"10.1002","volume":"7","author":[{"given":"Gwang\u2010Bok","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nuri","family":"On","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Taikyu","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Cheol Hee","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jae Seok","family":"Hur","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun Hyung","family":"Lim","sequence":"additional","affiliation":[{"name":"R&amp;D Center Samsung Display Company Ltd.  Yongin 17113 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3857-1039","authenticated-orcid":false,"given":"Jae Kyeong","family":"Jeong","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04763 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2023,3,16]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature03090"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1080\/15980316.2021.1977401"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201103228"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1080\/15980316.2020.1818641"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2353811"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.925240"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/jsid.888"},{"key":"e_1_2_8_8_1","author":"Kim T.","year":"2022","journal-title":"Adv. Mater."},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c16325"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1021\/am508071y"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep01459"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1788897"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3055940"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.ceramint.2022.01.151"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c06382"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c22677"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2284599"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1083212"},{"key":"e_1_2_8_19_1","first-page":"391","volume":"8","author":"Bouajaj A.","year":"1997","journal-title":"J. Sol\u2010Gel Sci. Technol."},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201200683"},{"key":"e_1_2_8_21_1","first-page":"6232","author":"Lermusiaux L.","year":"2022","journal-title":"Acc. Chem. Res."},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4947063"},{"key":"e_1_2_8_23_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-017-11461-0"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2020.158009"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4803706"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1111\/j.1551-2916.2008.02686.x"},{"key":"e_1_2_8_27_1","first-page":"6","volume-title":"Lange's Handbook of Chemistry","author":"James S.","year":"2005"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-020-76046-w"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5041029"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2013.05.057"},{"key":"e_1_2_8_31_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2020.156606"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1021\/ja100615r"},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.1c00553"},{"key":"e_1_2_8_34_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.1c01315"},{"key":"e_1_2_8_35_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemmater.0c01672"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1557\/jmr.2013.214"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2015.04.048"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1007\/s13391-017-1613-2"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b03865"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0072077"},{"key":"e_1_2_8_41_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2475604"},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c04401"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-022-28480-9"},{"key":"e_1_2_8_44_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00671-0"}],"container-title":["Small Methods"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smtd.202201522","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/smtd.202201522","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smtd.202201522","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,17]],"date-time":"2023-08-17T12:15:15Z","timestamp":1692274515000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/smtd.202201522"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3,16]]},"references-count":44,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2023,7]]}},"alternative-id":["10.1002\/smtd.202201522"],"URL":"https:\/\/doi.org\/10.1002\/smtd.202201522","archive":["Portico"],"relation":{},"ISSN":["2366-9608","2366-9608"],"issn-type":[{"value":"2366-9608","type":"print"},{"value":"2366-9608","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,3,16]]},"assertion":[{"value":"2022-11-19","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2023-03-16","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2201522"}}