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Among numerous types of TOS\u2010TFTs, In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\u2010based TFTs are the front\u2010running candidate because they exhibit the highest <jats:italic>\u00b5<\/jats:italic><jats:sub>FE<\/jats:sub> \u2248100\u00a0cm<jats:sup>2<\/jats:sup>\u00a0V<jats:sup>\u22121<\/jats:sup>\u00a0s<jats:sup>\u22121<\/jats:sup>. However, the device operation of In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs is unreliable; a large voltage shift occurs especially when negative gate bias is applied due to adsorption\/desorption of gas molecules. Although passivation of the TFTs is used to overcome such instability, previously proposed passivation materials do not improve the reliability. Here, it is shown that the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs passivated with Y<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> and Er<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> films are highly reliable and do not show threshold voltage shifts when applying gate bias. Positive and negative gate bias is applied to the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs passivated with various insulating oxides and found that only the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs passivated with Y<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> and Er<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> films do not exhibit threshold voltage shifts. It is observed that only the Y<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> grew heteroepitaxially on the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> crystal. This is the origin of the high reliability of the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs passivated with Y<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> and Er<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> films. This finding accelerates the development of next\u2010generation displays using high\u2010mobility In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFTs.<\/jats:p>","DOI":"10.1002\/smtd.202400578","type":"journal-article","created":{"date-parts":[[2024,8,3]],"date-time":"2024-08-03T07:45:34Z","timestamp":1722671134000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":24,"title":["Reliable Operation in High\u2010Mobility Indium Oxide Thin Film Transistors"],"prefix":"10.1002","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9953-0471","authenticated-orcid":false,"given":"Prashant R.","family":"Ghediya","sequence":"first","affiliation":[{"name":"Research Institute for Electronic Science Hokkaido University  N20W10, Kita Sapporo 001\u20130020 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