{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T12:43:03Z","timestamp":1790772183600,"version":"4.1.0"},"reference-count":62,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T00:00:00Z","timestamp":1763769600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T00:00:00Z","timestamp":1763769600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2026,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Atomic\u2010level precision processes are increasingly essential for advanced semiconductor devices with highly\u2010complicated small features. Plasma\u2010enhanced atomic layer etching (ALE) is considered as a promising technique to meet requirements of material diversity and highly selective processing. Here, the ALE processes of SiO\n                    <jats:sub>2<\/jats:sub>\n                    and SiN are demonstrated through manipulating hydrogen\u2010fluoride (HF) reactions for surface modification, followed by argon ion bombardment for material removal. By varying substrate temperature (\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>s<\/jats:sub>\n                    ) and introducing ethanol (C\n                    <jats:sub>2<\/jats:sub>\n                    H\n                    <jats:sub>5<\/jats:sub>\n                    OH) gas, which provides hydroxyl groups for cryogenic\u2010assisted synergistic reactions, the surface HF reactions and the properties of the surface modification layer can be significantly influenced. The etch amount per cycle (EPC) of SiN ALE decreases to zero with decreasing\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>s<\/jats:sub>\n                    , regardless of C\n                    <jats:sub>2<\/jats:sub>\n                    H\n                    <jats:sub>5<\/jats:sub>\n                    OH addition, due to increased stability of the (NH\n                    <jats:sub>4<\/jats:sub>\n                    )\n                    <jats:sub>2<\/jats:sub>\n                    SiF\n                    <jats:sub>6<\/jats:sub>\n                    modification layer. No ALE synergy is observed for SiO\n                    <jats:sub>2<\/jats:sub>\n                    when C\n                    <jats:sub>2<\/jats:sub>\n                    H\n                    <jats:sub>5<\/jats:sub>\n                    OH is not added during the HF dose step, irrespective of\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>s<\/jats:sub>\n                    . Conversely, the addition of C\n                    <jats:sub>2<\/jats:sub>\n                    H\n                    <jats:sub>5<\/jats:sub>\n                    OH at cryogenic temperatures enables the synergistic interactions between HF molecules and hydroxyl groups, enhancing the co\u2010adsorption of HF\/C\n                    <jats:sub>2<\/jats:sub>\n                    H\n                    <jats:sub>5<\/jats:sub>\n                    OH and lowering activation energy for the fluorination reaction of the SiO\n                    <jats:sub>2<\/jats:sub>\n                    that leads to the increased EPC. Consequently, the reversible etching selectivity between ALE SiO\n                    <jats:sub>2<\/jats:sub>\n                    and SiN, reaching up to infinity, is achieved.\n                  <\/jats:p>","DOI":"10.1002\/smtd.202501744","type":"journal-article","created":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T08:42:56Z","timestamp":1763800976000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Cryogenic\u2010Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra\u2010High Selectivity of Atomic Layer Etching Between SiO\n                    <sub>2<\/sub>\n                    and SiN"],"prefix":"10.1002","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6361-4075","authenticated-orcid":false,"given":"Shih\u2010Nan","family":"Hsiao","sequence":"first","affiliation":[{"name":"Center for Low\u2010temperature Plasma Sciences Nagoya University  Furocho, Chikusaku Nagoya Aichi 464\u20108603 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Makoto","family":"Sekine","sequence":"additional","affiliation":[{"name":"Center for Low\u2010temperature Plasma Sciences Nagoya University  Furocho, Chikusaku Nagoya Aichi 464\u20108603 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ryutaro","family":"Suda","sequence":"additional","affiliation":[{"name":"Tokyo Electron Miyagi Ltd.  Techno\u2010Hills, Taiwa\u2010cho Kurokawa\u2010gun Miyagi 981\u20103629 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshihide","family":"Kihara","sequence":"additional","affiliation":[{"name":"Tokyo Electron Miyagi Ltd.  Techno\u2010Hills, Taiwa\u2010cho Kurokawa\u2010gun Miyagi 981\u20103629 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Masaru","family":"Hori","sequence":"additional","affiliation":[{"name":"Center for Low\u2010temperature Plasma Sciences Nagoya University  Furocho, Chikusaku Nagoya Aichi 464\u20108603 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,11,22]]},"reference":[{"key":"e_1_2_7_1_1","doi-asserted-by":"publisher","DOI":"10.1049\/nde2.12026"},{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003531"},{"key":"e_1_2_7_3_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0158785"},{"key":"e_1_2_7_4_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6595\/ac95bc"},{"key":"e_1_2_7_5_1","doi-asserted-by":"publisher","DOI":"10.1039\/D4NA00784K"},{"key":"e_1_2_7_6_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2022.107169"},{"key":"e_1_2_7_7_1","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/acd065"},{"key":"e_1_2_7_8_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6595\/ad8217"},{"key":"e_1_2_7_9_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.accounts.0c00084"},{"key":"e_1_2_7_10_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0189397"},{"key":"e_1_2_7_11_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003793"},{"key":"e_1_2_7_12_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003345"},{"key":"e_1_2_7_13_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.3c04705"},{"key":"e_1_2_7_14_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0002447"},{"key":"e_1_2_7_15_1","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/ad0c46"},{"key":"e_1_2_7_16_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003447"},{"key":"e_1_2_7_17_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0001602"},{"key":"e_1_2_7_18_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0002965"},{"key":"e_1_2_7_19_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003170"},{"key":"e_1_2_7_20_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0004259"},{"key":"e_1_2_7_21_1","doi-asserted-by":"publisher","DOI":"10.1039\/D4TC03615H"},{"key":"e_1_2_7_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/smsc.202500251"},{"key":"e_1_2_7_23_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0003263"},{"key":"e_1_2_7_24_1","doi-asserted-by":"publisher","DOI":"10.1002\/smtd.202402166"},{"key":"e_1_2_7_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202408154"},{"key":"e_1_2_7_26_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.160598"},{"key":"e_1_2_7_27_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c02598"},{"key":"e_1_2_7_28_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5119033"},{"key":"e_1_2_7_29_1","doi-asserted-by":"publisher","DOI":"10.1116\/6.0001885"},{"key":"e_1_2_7_30_1","doi-asserted-by":"publisher","DOI":"10.1039\/D4NR02085E"},{"key":"e_1_2_7_31_1","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/add7e5"},{"key":"e_1_2_7_32_1","doi-asserted-by":"publisher","DOI":"10.1002\/ppap.202100078"},{"key":"e_1_2_7_33_1","doi-asserted-by":"crossref","unstructured":"Y.Kihara 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