{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,4]],"date-time":"2026-09-04T21:46:22Z","timestamp":1788558382877,"version":"build-2803163510"},"reference-count":59,"publisher":"Wiley","issue":"12","license":[{"start":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T00:00:00Z","timestamp":1772236800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T00:00:00Z","timestamp":1772236800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2026,6]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The widespread adoption of organic thin\u2010film transistors (OTFTs) in flexible, wearable, and biodegradable electronics depends on achieving optimal electrical performance while ensuring reliable performance under typical environmental stressors such as humidity, oxygen, and heat. Among these, thermal stability remains underexplored, despite being critical for devices exposed to sterilization, body heat, or fluctuating environmental conditions. Here, we demonstrate that the thermal response of fluorinated silicon phthalocyanine (F\n                    <jats:sub>10<\/jats:sub>\n                    \u2010SiPc) OTFTs can be rationally tuned by interfacial chemistry and deposition temperature, providing a scalable route to environmental robustness. By comparing octyltrichlorosilane (OTS), hexamethyldisilazane (HMDS), and plasma\u2010treated SiO\n                    <jats:sub>2<\/jats:sub>\n                    dielectrics with F\n                    <jats:sub>10<\/jats:sub>\n                    \u2010SiPc films deposited at either 25\u00b0C or 100\u00b0C, we identify two distinct transport regimes. OTS promotes highly crystalline films with excellent room\u2010temperature mobility but exhibits non\u2010recoverable reduced performance at elevated operating temperatures, accompanied by increased post\u2010heating hysteresis, suggestive of dipole\u2010induced interfacial charge trapping. In contrast, HMDS and plasma yield more disordered morphologies that reorganize reversibly under heat, leading to mobility enhancements of 100%\u2013800% via thermally activated hopping. Raising the deposition temperature lowers the initial mobility but reshapes the trajectory of thermal response. Together, these results establish interlayer selection and deposition temperature as complementary design parameters to deliberately program thermal stability profiles in OTFTs. This framework connects processing to operational reliability, advancing the design of organic electronics capable of surviving real\u2010world thermal and environmental demands without new materials or complex encapsulation.\n                  <\/jats:p>","DOI":"10.1002\/smtd.202502171","type":"journal-article","created":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T09:49:26Z","timestamp":1772963366000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Thermal Operational Stability in Organic Thin Film Transistors: The Critical Role of Interface Composition and Deposition Conditions"],"prefix":"10.1002","volume":"10","author":[{"given":"Forest","family":"St\u2010Denis\u2010Weintrager","sequence":"first","affiliation":[{"name":"Department of Chemical and Biological Engineering University of Ottawa  Ottawa Ontario 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