{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,14]],"date-time":"2026-06-14T15:52:28Z","timestamp":1781452348229,"version":"3.54.1"},"reference-count":31,"publisher":"Wiley","issue":"11","license":[{"start":{"date-parts":[[2026,5,26]],"date-time":"2026-05-26T00:00:00Z","timestamp":1779753600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,5,26]],"date-time":"2026-05-26T00:00:00Z","timestamp":1779753600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100007162","name":"Guangdong Provincial Department of Science and Technology","doi-asserted-by":"publisher","award":["2025D03J0018"],"award-info":[{"award-number":["2025D03J0018"]}],"id":[{"id":"10.13039\/501100007162","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2026,6]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Graphene\/hexagonal Boron Nitride (h\u2010BN) devices offer high spin mobilities and atomically clean interfaces, yet spin coherence remains limited by inevitable interfacial imperfection and inseparable thickness\u2010scattering correlations. In this work, employing a full van\u2010der\u2010Waals (vdW) fabrication strategy, we fabricated graphene Hall bars on 11\u2010 and 22\u00a0nm h\u2010BN substrates, strategically selected to bracket the continuum dielectric regime where thickness\u2010tuned screening dominates. The devices exhibit sub\u2010\u00e5ngstr\u00f6m flatness and are devoid of interfacial bubbles, convinced by optical and scanning electron microscopy images. Magneto\u2010transport measurements show that such clean interfaces enable phase\u2010coherence lengths that approach the channel width, and meanwhile decouple spin transport characteristics from h\u2010BN dielectric thickness. First\u2010principles calculations confirm that interfacial charge transfer and proximity spin\u2013orbit coupling saturate at the first h\u2010BN monolayer. Additional thickness merely enhances electrostatic screening without introducing disorder. This full vdW strategy delivers a scalable, back\u2010end\u2010compatible materials platform for ultra\u2010low\u2010dissipation two\u2010dimensional spin logic and topological superconducting circuits with atomically perfect interfaces.<\/jats:p>","DOI":"10.1002\/smtd.202502182","type":"journal-article","created":{"date-parts":[[2026,5,26]],"date-time":"2026-05-26T08:26:47Z","timestamp":1779784007000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Full Van\u2010der\u2010Waals Graphene\/h\u2010BN Hall Bars With Thickness\u2010Tuned Dielectric Shielding Enable Phase\u2010Coherent Spin Transport"],"prefix":"10.1002","volume":"10","author":[{"given":"Feiyuan","family":"Ding","sequence":"first","affiliation":[{"name":"The Hong Kong University of Science and Technology \u2013 Guangzhou Campus  Guangzhou Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1004-8767","authenticated-orcid":false,"given":"Kezhou","family":"Yang","sequence":"additional","affiliation":[{"name":"The Hong Kong University of Science and Technology \u2013 Guangzhou Campus  Guangzhou Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,5,26]]},"reference":[{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms7766"},{"key":"e_1_2_7_3_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.6b01080"},{"key":"e_1_2_7_4_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.126.136804"},{"key":"e_1_2_7_5_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1244358"},{"key":"e_1_2_7_6_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.86.161416"},{"key":"e_1_2_7_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010017\u201000233\u20107"},{"key":"e_1_2_7_8_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053\u20101583\/4\/1\/014001"},{"key":"e_1_2_7_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010019\u20101305\u20108"},{"key":"e_1_2_7_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4726"},{"key":"e_1_2_7_11_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.92.155403"},{"key":"e_1_2_7_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys2307"},{"key":"e_1_2_7_13_1","doi-asserted-by":"publisher","DOI":"10.1143\/PTP.63.707"},{"key":"e_1_2_7_14_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.108.166606"},{"key":"e_1_2_7_15_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022\u20103719\/15\/36\/018"},{"key":"e_1_2_7_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature04233"},{"key":"e_1_2_7_17_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1237240"},{"key":"e_1_2_7_18_1","doi-asserted-by":"publisher","DOI":"10.1016\/0370\u20101573(84)90103\u20100"},{"key":"e_1_2_7_19_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.206801"},{"key":"e_1_2_7_20_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl504663n"},{"key":"e_1_2_7_21_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3599708"},{"key":"e_1_2_7_22_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.93.155104"},{"key":"e_1_2_7_23_1","unstructured":"H. Q. GrapheneDatasheet Single\u2010Crystal h\u2010BN (grade A)(2025) https:\/\/hqgraphene.com."},{"key":"e_1_2_7_24_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4803041"},{"key":"e_1_2_7_25_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053\u20101583\/1\/1\/011002"},{"key":"e_1_2_7_26_1","volume-title":"DynaCool Physical Property Measurement System\u2014User Manual","author":"Quantum Design","year":"2023"},{"key":"e_1_2_7_27_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.50.17953"},{"key":"e_1_2_7_28_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.59.1758"},{"key":"e_1_2_7_29_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"e_1_2_7_30_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3382344"},{"key":"e_1_2_7_31_1","doi-asserted-by":"publisher","DOI":"10.1107\/S0021889811038970"},{"key":"e_1_2_7_32_1","volume-title":"Atoms in Molecules: A Quantum Theory","author":"Bader R. F. 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