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Direct photolithography stands as a leading approach for high\u2010resolution pixelation, but patterned devices still suffer from severe performance deterioration. Herein, by integrating high\u2010efficient perovskite nanocrystals and damage\u2010free carbene\u2010based crosslinkers, we reveal the development process as a critical yet overlooked factor influencing pixelated device performance remarkably. The interfacial adhesion between perovskite nanocrystals and the hole transport layer (HTL) dictates both patterning fidelity and residual\u2010induced background emission. Excessively strong adhesion leads to incomplete development, while weak adhesion compromises pattern integrity. Additionally, conventional developers cause unselective dissolution damage, inevitably degrading the optoelectronic properties of crosslinked perovskite nanocrystals. By synergistically optimizing the HTL to regulate adhesion strength and tailoring the developer with butyric acid for in situ perovskite nanocrystals surface passivation, we minimize development\u2010induced damage while maintaining clean pattern definition. This integrated optimization yields high\u2010resolution (5080 PPI) PeLED arrays with a record external quantum efficiency of 20% and a peak luminance of 3061\u00a0cd m\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>2<\/jats:sup>\n                    , providing a novel perspective toward high\u2010resolution PeLEDs.\n                  <\/jats:p>","DOI":"10.1002\/smtd.70814","type":"journal-article","created":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T04:26:39Z","timestamp":1782966399000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Optimizing the Development Process in Direct Photolithography for Efficient PeLEDs"],"prefix":"10.1002","volume":"10","author":[{"given":"Kaipeng","family":"Wu","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaofang","family":"Zhu","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yun","family":"Gao","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junjie","family":"Si","sequence":"additional","affiliation":[{"name":"College of Optical and Electronic Technology China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongqing","family":"Bai","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, State Key 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