{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,4]],"date-time":"2026-09-04T08:14:24Z","timestamp":1788509664225,"version":"build-2803163510"},"reference-count":66,"publisher":"Wiley","issue":"16","license":[{"start":{"date-parts":[[2026,7,26]],"date-time":"2026-07-26T00:00:00Z","timestamp":1785024000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,7,26]],"date-time":"2026-07-26T00:00:00Z","timestamp":1785024000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2026,8]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Single\u2010crystalline molybdenum disulfide (MoS\n                    <jats:sub>2<\/jats:sub>\n                    ) emerges as a leading n\u2010type channel material for high\u2010performance electronic devices in the angstrom era of computing. Chemical vapor epitaxy of single\u2010crystalline MoS\n                    <jats:sub>2<\/jats:sub>\n                    relies on sapphire template engineering to impose a preferred crystalline orientation. A challenge of these approaches is to control the within\u2010wafer statistical variance of the MoS\n                    <jats:sub>2<\/jats:sub>\n                    orientation when sapphire substrates are manufactured to semiconductor industry\u2010standard specifications and wafer size. Here, we report single\u2010crystalline MoS\n                    <jats:sub>2<\/jats:sub>\n                    on sapphire by metal\u2010organic chemical vapor deposition (MOCVD), a mainstream semiconductor manufacturing method, without relying on template\u2010engineering. By lowering the precursor adsorption rate in the mass\u2010transport\u2010limited reaction regime, the MoS\n                    <jats:sub>2<\/jats:sub>\n                    nucleation and growth rate slows sufficiently to favor epitaxy, initially with 0\u00b0 and 60\u00b0\u2010oriented crystals. Although a minority of 60\u00b0\u2010oriented crystals deposit, a single\u2010crystalline MoS\n                    <jats:sub>2<\/jats:sub>\n                    monolayer forms through recrystallization of 60\u00b0\u2010oriented domains during and after MoS\n                    <jats:sub>2<\/jats:sub>\n                    monolayer coalescence. As a result, single\u2010crystalline 1.1 MoS\n                    <jats:sub>2<\/jats:sub>\n                    monolayer exhibits carrier mobilities of 30 \u00b1 5 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    in transistors fabricated through a 300\u00a0mm bonding\u2010to\u2010wafer route. Recrystallization during chemical vapor epitaxy presents a key mechanism to modulate crystal defect structures in transition metal dichalcogenides and is compatible with both bonding\u2010to\u2010wafer and monolithic integration approaches.\n                  <\/jats:p>","DOI":"10.1002\/smtd.70892","type":"journal-article","created":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T05:49:13Z","timestamp":1785131353000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Recrystallization\u2010Driven Formation of Single\u2010Crystalline MoS\n                    <sub>2<\/sub>\n                    by Metal\u2010Organic Chemical Vapor Epitaxy"],"prefix":"10.1002","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2110-2618","authenticated-orcid":false,"given":"Iryna","family":"Kandybka","sequence":"first","affiliation":[{"name":"Department of Chemistry KU Leuven  Leuven Belgium"},{"name":"imec  Leuven 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