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Here, we report a trace\u2010residual buried interface (TRBI) strategy that simultaneously addresses both limitations. Specifically, a thin A\u2010D\u2010A\u2010type acceptor (L8\u2010BO) layer pre\u2010deposited on ZnO leaves an anchored trace residue after active layer deposition. This ultrathin interlayer passivates surface defects of ZnO and upshifts the Fermi level while inducing ordered molecular packing of the acceptor at the buried interface. Consequently, electron transport and extraction are both accelerated, contributing to distinctly higher short\u2010circuit current density and fill factor (FF). The strategy also proves universal across various primer acceptors and photoactive systems. With a ternary D18:PM6:CH1007 system, the resulting device achieves an efficiency of 18.7% with an FF of 80.59%, which are among the top values for inverted OSCs. It further delivers markedly enhanced thermal stability, with 91% PCE retention after 2000\u00a0h at 85\u00b0C, outperforming pristine ZnO and classic PFN\u2010Br\u2010modified references. Overall, this work demonstrates a buried\u2010interface engineering strategy that concurrently suppresses multiple defects at the ZnO\/active\u2010layer contact, providing a simple yet effective route toward efficient and stable inverted OSCs.<\/jats:p>","DOI":"10.1002\/smtd.70906","type":"journal-article","created":{"date-parts":[[2026,7,28]],"date-time":"2026-07-28T09:33:34Z","timestamp":1785231214000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Sequential Processing Leaves Trace A\u2010D\u2010A\u2010type Acceptor as a Bifunctional Buried Interlayer for Efficient and Stable Inverted Organic Solar Cells"],"prefix":"10.1002","volume":"10","author":[{"given":"Jiaqi","family":"Hu","sequence":"first","affiliation":[{"name":"State Key Laboratory of Flexible Electronics (LOFE), Institute of Advanced Materials (IAM) &amp; School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech)  Nanjing Jiangsu China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengcheng","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Flexible Electronics (LOFE), Institute of Advanced Materials (IAM) &amp; School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech)  Nanjing Jiangsu China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Longfei","family":"Jia","sequence":"additional","affiliation":[{"name":"Co\u2010Innovation Center of Efficient Processing and Utilization of Forest Resources, College of Materials Science and Engineering Nanjing Forestry University  Nanjing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3549-1482","authenticated-orcid":false,"given":"Jianqi","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Nanosystem and Hierarchical Fabrication National Center For Nanoscience and 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(NanjingTech)  Nanjing Jiangsu China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Diyora","family":"Urazkulova","sequence":"additional","affiliation":[{"name":"Institute of Ion\u2010Plasma and Laser Technologies Uzbekistan Academy of Sciences  Tashkent Uzbekistan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9956-6009","authenticated-orcid":false,"given":"Vakhobjon","family":"Kuvondikov","sequence":"additional","affiliation":[{"name":"Institute of Ion\u2010Plasma and Laser Technologies Uzbekistan Academy of Sciences  Tashkent Uzbekistan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tugolbay","family":"Matisakov","sequence":"additional","affiliation":[{"name":"Osh State University  Osh 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