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This article provides a comprehensive review of the latest research progress in Te, Se, Se\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    Te\n                    <jats:sub>1\u2010<\/jats:sub>\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    alloys and their oxides. First, we overview the significant physical structure anisotropy and diverse electronic properties\u2014including bandgap coverage from mid\u2010wave infrared (MWIR) to visible light\u2014that arise from their distinctive crystal structures. Second, various synthesis strategies are compared in detail, including chemical vapor deposition (CVD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), and solution\u2010phase methods, with a particular focus on recent breakthroughs in wafer\u2010scale uniform growth and bandgap engineering. At the application level, the review highlights high\u2010performance Te\/Se\u2010based p\u2010type field\u2010effect transistors (FETs), large\u2010scale complementary metal oxide semiconductor (CMOS) logic circuits (e.g., inverters, NAND gates, and full adders), and high\u2010sensitivity infrared to visible optoelectronics. Finally, current challenges in high\u2010performance single\u2010crystal preparation and industrial integration are summarized, alongside an outlook on the application prospects of these novel low\u2010dimensional materials in flexible electronics and neuromorphic computing.\n                  <\/jats:p>","DOI":"10.1002\/smtd.70969","type":"journal-article","created":{"date-parts":[[2026,8,22]],"date-time":"2026-08-22T04:25:21Z","timestamp":1787372721000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Advances in Te\/Se\u2010Based 2D p\u2010Type Semiconductors for Electronics and Optoelectronics"],"prefix":"10.1002","volume":"10","author":[{"given":"Jiaxin","family":"Lv","sequence":"first","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen 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China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5306-0926","authenticated-orcid":false,"given":"Congwei","family":"Liao","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2746-744X","authenticated-orcid":false,"given":"Peng","family":"Yang","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4341-7231","authenticated-orcid":false,"given":"Zhang","family":"Liang","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4583-8889","authenticated-orcid":false,"given":"Cun\u2010Zheng","family":"Ning","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen 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