{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T14:00:36Z","timestamp":1790172036510,"version":"4.1.0"},"reference-count":50,"publisher":"Wiley","issue":"18","license":[{"start":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T00:00:00Z","timestamp":1786924800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T00:00:00Z","timestamp":1786924800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001711","name":"Schweizerischer Nationalfonds zur F\u00f6rderung der Wissenschaftlichen Forschung","doi-asserted-by":"publisher","award":["10.002.312"],"award-info":[{"award-number":["10.002.312"]}],"id":[{"id":"10.13039\/501100001711","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2026,9]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Mixed monolayer doping (MMLD) is an attractive strategy for controllable low\u2010dose, low\u2010energy silicon doping via surface chemistry, yet the influence of carbon removal and surface effects on electronic properties remains unclear. In this work, silicon is doped using mixed monolayers of allyldiphenylphosphine (ADP) and 1\u2010undecene, followed by O\n                    <jats:sub>2<\/jats:sub>\n                    plasma ashing, SiO\n                    <jats:sub>2<\/jats:sub>\n                    capping, and rapid thermal annealing (RTA). The plasma treatment is systematically investigated, identifying conditions that effectively remove carbon while largely preserving phosphorus in the grafted layer, as confirmed by x\u2010ray photoelectron spectroscopy (XPS). Kelvin probe force microscopy (KPFM) reveals a pronounced decrease in work function (WF) with increasing ADP molar fraction, and the SiO\n                    <jats:sub>2<\/jats:sub>\n                    deposition method plays a key role: evaporated SiO\n                    <jats:sub>2<\/jats:sub>\n                    combined with O\n                    <jats:sub>2<\/jats:sub>\n                    plasma leads to a WF consistent with enhanced n\u2010type activation, whereas sputtered SiO\n                    <jats:sub>2<\/jats:sub>\n                    induces strong work\u2010function pinning, independent of ADP concentration. Four\u2010point probe and Hall measurements confirm increasing conductivity and sheet carrier density with ADP fraction, but show no significant dependence on plasma treatment, indicating that carbon\u2010related effects are confined to the near\u2010surface region. These results demonstrate that surface\u2010sensitive WF changes do not necessarily reflect bulk dopant activation, and highlight the need to combine complementary characterization techniques for a reliable assessment of MMLD processes.\n                  <\/jats:p>","DOI":"10.1002\/smtd.70970","type":"journal-article","created":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T08:20:57Z","timestamp":1786954857000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Impact of Plasma Ashing on Mixed Monolayer Doping of Silicon"],"prefix":"10.1002","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-2891-1694","authenticated-orcid":false,"given":"Pol","family":"Torres\u2010Vila","sequence":"first","affiliation":[{"name":"Microsystems Laboratory \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)  Lausanne Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3533-4217","authenticated-orcid":false,"given":"Thilo","family":"Glatzel","sequence":"additional","affiliation":[{"name":"Department of Physics University of Basel  Basel Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-5319-1792","authenticated-orcid":false,"given":"Mounir","family":"Mensi","sequence":"additional","affiliation":[{"name":"X\u2010Ray Diffraction and Surface Analytics Platform (XRD\u2010SAP), ISIC EPFL Valais  Sion Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4913-3114","authenticated-orcid":false,"given":"Giovanni","family":"Boero","sequence":"additional","affiliation":[{"name":"Microsystems Laboratory \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)  Lausanne Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7710-5930","authenticated-orcid":false,"given":"Juergen","family":"Brugger","sequence":"additional","affiliation":[{"name":"Microsystems Laboratory \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)  Lausanne Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1044-0478","authenticated-orcid":false,"given":"Arnaud","family":"Bertsch","sequence":"additional","affiliation":[{"name":"Microsystems Laboratory \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)  Lausanne 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