{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,25]],"date-time":"2026-09-25T08:04:26Z","timestamp":1790323466063,"version":"4.1.0"},"reference-count":42,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,25]],"date-time":"2026-09-25T00:00:00Z","timestamp":1790294400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,25]],"date-time":"2026-09-25T00:00:00Z","timestamp":1790294400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100021171","name":"Basic and Applied Basic Research Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2024A1515140115"],"award-info":[{"award-number":["2024A1515140115"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Antimony chalcogenide (Sb\n                    <jats:sub>2<\/jats:sub>\n                    (S,Se)\n                    <jats:sub>3<\/jats:sub>\n                    ) is a promising low\u2010cost thin\u2010film photovoltaic absorber, yet hydrothermal deposition is often limited by mismatched S\/Se reaction kinetics, which induce reverse compositional and bandgap gradients that impede carrier transport. Herein, ramp\u2010heating (RH) and hot\u2010insertion (HI) routes are compared to regulate the hydrothermal film\u2010formation pathway. Compared with RH, HI promotes a more balanced chalcogen supply by modulating the relative reaction kinetics of sulfur\u2010 and selenium\u2010containing species, thereby homogenizing the vertical S\/Se distribution and bandgap profile. The balanced reaction pathway favors film densification, more complete grain coalescence, and improved vertical structural uniformity, yielding compact and smooth films with more balanced local bonding. Band\u2010structure and electrical analyses reveal optimized interfacial energetics, reduced series resistance, enhanced recombination resistance, widened depletion regions, and a defect transition from deep V\n                    <jats:sub>S(e)1<\/jats:sub>\n                    to shallower Sb\n                    <jats:sub>S(e)1<\/jats:sub>\n                    states with reduced trap density. Consequently, the power conversion efficiency (PCE) increases from 9.65% to 10.48%, with simultaneous improvements in open\u2010circuit voltage, short\u2010circuit current density, and fill factor (FF). These findings identify balanced chalcogen\u2010supply\u2010mediated film formation as an effective mechanism for mitigating vertical inhomogeneity in Sb\n                    <jats:sub>2<\/jats:sub>\n                    (S,Se)\n                    <jats:sub>3<\/jats:sub>\n                    solar cells.\n                  <\/jats:p>","DOI":"10.1002\/smtd.71068","type":"journal-article","created":{"date-parts":[[2026,9,25]],"date-time":"2026-09-25T07:34:32Z","timestamp":1790321672000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Hydrothermal Growth\u2010Pathway Engineering Enables Suppressed Reverse Compositional Gradients for High\u2010Efficiency Sb\n                    <sub>2<\/sub>\n                    (S,Se)\n                    <sub>3<\/sub>\n                    Solar Cells"],"prefix":"10.1002","author":[{"given":"Yiming","family":"Zhong","sequence":"first","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5809-2583","authenticated-orcid":false,"given":"Rong","family":"Tang","sequence":"additional","affiliation":[{"name":"School of New Energy and Environmental Protection Engineering Foshan Polytechnic  Foshan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tianhua","family":"Zou","sequence":"additional","affiliation":[{"name":"School of New Energy and Environmental Protection Engineering Foshan Polytechnic  Foshan 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Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Boyang","family":"Fu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Zhao","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenghua","family":"Su","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1512-376X","authenticated-orcid":false,"given":"Shuo","family":"Chen","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9033-4885","authenticated-orcid":false,"given":"Guangxing","family":"Liang","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2475-9826","authenticated-orcid":false,"given":"Zhuanghao","family":"Zheng","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State 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