{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T09:50:46Z","timestamp":1791625846926,"version":"4.3.4"},"reference-count":42,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T00:00:00Z","timestamp":1791590400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T00:00:00Z","timestamp":1791590400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12434019"],"award-info":[{"award-number":["12434019"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Heterogeneous integration of dissimilar functional materials enables advanced micro\/nano devices with unprecedented functionalities, yet the resulting interfacial multiphysics interactions can introduce hidden energy leakage pathways beyond conventional bulk systems. Here, we reveal a previously overlooked carrier\u2010mediated acoustic leakage mechanism in piezoelectric\u2010semiconductor heterostructures. By developing an electromechanical\u2010carrier coupling model, we demonstrate that interfacial carrier accumulation reconstructs electrical boundary conditions, causing piezoelectric fields to penetrate into non\u2010resonant regions. The resulting electric field distortion activates parasitic mechanical vibrations, which radiate bulk acoustic waves into the silicon substrate and degrade the quality (Q) factor. Ultrafast femtosecond laser pump\u2010probe spectroscopy is further employed to characterize carrier dynamics, establishing a quantitative link between carrier modulation and acoustic performance. Guided by this mechanism, multiphysics decoupling strategies based on material engineering and electric field engineering are developed to suppress carrier\u2010mediated acoustic leakage. By reconstructing electrical boundaries through defect\u2010state modulation and asymmetric electrode design, the Q factor of piezoelectric\u2010semiconductor devices is substantially enhanced while maintaining compatibility with standard fabrication processes. This work reveals an unconventional role of semiconductor carriers as mediators of acoustic energy redistribution and provides a mechanism\u2010guided strategy for designing high\u2010performance heterogeneously integrated micro\/nano devices.<\/jats:p>","DOI":"10.1002\/smtd.71103","type":"journal-article","created":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T09:28:21Z","timestamp":1791624501000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Unveiling Carrier\u2010Mediated Acoustic Leakage as a Hidden Loss Pathway in Piezoelectric\u2010Semiconductor Heterostructures"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-7512-6182","authenticated-orcid":false,"given":"Wenxuan","family":"Li","sequence":"first","affiliation":[{"name":"State Key Laboratory of Submarine Geoscience Shanghai Jiao Tong University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-9172-3206","authenticated-orcid":false,"given":"Xianrui","family":"Shi","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Submarine Geoscience Shanghai Jiao Tong University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaolong","family":"Tang","sequence":"additional","affiliation":[{"name":"CETC Chips Technology Inc  Chongqing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenzheng","family":"Qiu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Submarine Geoscience Shanghai Jiao Tong University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-4996-4053","authenticated-orcid":false,"given":"Wei","family":"Chu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Submarine Geoscience Shanghai Jiao Tong University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shiyi","family":"Jiang","sequence":"additional","affiliation":[{"name":"CETC Chips Technology Inc  Chongqing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinyi","family":"Ma","sequence":"additional","affiliation":[{"name":"CETC Chips Technology Inc  Chongqing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tao","family":"Han","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Submarine Geoscience Shanghai Jiao Tong University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,10,10]]},"reference":[{"key":"e_1_2_11_2_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.202411108","article-title":"Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives","volume":"37","author":"Choi S. H.","year":"2025","journal-title":"Advanced Materials"},{"key":"e_1_2_11_3_1","first-page":"254","article-title":"The Heterogeneous Integration of Electronic Components","volume":"1","author":"Mahajan R. V.","year":"2024","journal-title":"Nature Reviews Electrical Engineering"},{"key":"e_1_2_11_4_1","doi-asserted-by":"crossref","first-page":"439","DOI":"10.1038\/s41928-019-0314-2","article-title":"Epitaxial Growth and Layer\u2010Transfer Techniques for Heterogeneous Integration of Materials for Electronic and Photonic Devices","volume":"2","author":"Kum H.","year":"2019","journal-title":"Nature Electronics"},{"key":"e_1_2_11_5_1","doi-asserted-by":"crossref","DOI":"10.1007\/978-3-319-28688-4","volume-title":"Piezoelectric MEMS Resonators","author":"Bhugra H.","year":"2017"},{"key":"e_1_2_11_6_1","doi-asserted-by":"crossref","first-page":"840","DOI":"10.1126\/science.abc7312","article-title":"Nano\u2010Acoustic Resonator With Ultralong Phonon Lifetime","volume":"370","author":"MacCabe G. 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D.","year":"2024","journal-title":"Advanced Science"},{"key":"e_1_2_11_16_1","first-page":"1","article-title":"Enhancing Film Bulk Acoustic Resonators Performance by Optimizing AlN Seed Layer Crystallinity and Polarity Alignment","volume":"15","author":"Yang T.","year":"2024","journal-title":"Nature Communications"},{"key":"e_1_2_11_17_1","doi-asserted-by":"crossref","unstructured":"V.Plessky \u201cXBAR \u201d in2022 IEEE International Ultrasonics Symposium (IUS)(IEEE 2022) 1\u20134.","DOI":"10.1109\/IUS54386.2022.9957805"},{"key":"e_1_2_11_18_1","doi-asserted-by":"crossref","first-page":"2769","DOI":"10.1038\/s41467-021-22935-1","article-title":"Towards Single\u2010Chip Radiofrequency Signal Processing via Acoustoelectric Electron\u2013Phonon Interactions","volume":"12","author":"Hackett L.","year":"2021","journal-title":"Nature Communications"},{"key":"e_1_2_11_19_1","doi-asserted-by":"crossref","DOI":"10.1016\/j.tws.2024.112601","article-title":"Propagation of Leaky Surface Acoustic Waves in a Layered Piezoelectric Semiconductor Structure","volume":"205","author":"Zou Y.","year":"2024","journal-title":"Thin\u2010Walled Struct"},{"key":"e_1_2_11_20_1","doi-asserted-by":"crossref","first-page":"10","DOI":"10.1109\/75.752108","article-title":"SiO2 Interface Layer Effects on Microwave Loss of High\u2010Resistivity CPW Line","volume":"9","author":"Wu Y. 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J.","year":"2026","journal-title":"Journal of Physics D: Applied Physics"},{"key":"e_1_2_11_23_1","doi-asserted-by":"crossref","first-page":"5185","DOI":"10.1109\/TMTT.2022.3194554","article-title":"Surface Acoustic Wave Devices Based on Lithium Niobate and Amorphous Silicon Thin Films on a Silicon Substrate","volume":"70","author":"Yang Y.","year":"2022","journal-title":"IEEE Transactions on Microwave Theory and Techniques"},{"key":"e_1_2_11_24_1","doi-asserted-by":"crossref","first-page":"3478","DOI":"10.1109\/TED.2024.3386876","article-title":"Analysis Method for the Influence of Parasitic Surface Conductivity on Silicon\u2010Based Surface Acoustic Wave Devices","volume":"71","author":"Li M.","year":"2024","journal-title":"IEEE Transactions on Electron Devices"},{"key":"e_1_2_11_25_1","article-title":"Advanced AlN\u2010Based Bulk Acoustic Wave Filters on Trap\u2010Rich\/Si Substrate","volume":"98","author":"Qu Y.","year":"2023","journal-title":"Physica Scripta"},{"key":"e_1_2_11_26_1","doi-asserted-by":"crossref","first-page":"924","DOI":"10.1109\/TED.2012.2183598","article-title":"RF Harmonic Distortion of CPW Lines on HR\u2010Si and Trap\u2010Rich HR\u2010Si Substrates","volume":"59","author":"Roda Neve C.","year":"2012","journal-title":"IEEE Transactions on Electron Devices"},{"key":"e_1_2_11_27_1","doi-asserted-by":"crossref","first-page":"583","DOI":"10.3390\/mi14030583","article-title":"The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss","volume":"14","author":"Xu T.","year":"2023","journal-title":"Micromachines"},{"key":"e_1_2_11_28_1","doi-asserted-by":"crossref","first-page":"89","DOI":"10.1016\/j.physrep.2013.09.003","article-title":"Dissipation in Nanoelectromechanical Systems","volume":"534","author":"Imboden M.","year":"2014","journal-title":"Physics Reports"},{"key":"e_1_2_11_29_1","doi-asserted-by":"crossref","DOI":"10.1002\/advs.202203927","article-title":"\u03b5\u2010Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators","volume":"9","author":"Chen Z.","year":"2022","journal-title":"Advanced Science"},{"key":"e_1_2_11_30_1","doi-asserted-by":"crossref","first-page":"5617","DOI":"10.1038\/srep05617","article-title":"Phonon\u2010Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators","volume":"4","author":"Gokhale V. 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