{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,7]],"date-time":"2025-11-07T08:57:48Z","timestamp":1762505868791,"version":"build-2065373602"},"reference-count":49,"publisher":"Wiley","issue":"6","license":[{"start":{"date-parts":[[2012,1,23]],"date-time":"2012-01-23T00:00:00Z","timestamp":1327276800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Adv Funct Materials"],"published-print":{"date-parts":[[2012,3,21]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Freestanding silicon nanocrystals (Si\u2010ncs) offer unique optical and electronic properties for new photovoltaic, thermoelectric, and other electronic devices. A method to fabricate Si\u2010ncs which is scalable to industrial usage has been developed in recent years. However, barriers to the widespread utilization of these nanocrystals are the presence of charge\u2010trapping defects and an oxide shell formed upon ambient atmosphere exposure hindering the charge transport. Here, we exploit low\u2010cost post\u2010growth treatment routes based on wet\u2010etching in hydrofluoric acid plus surface hydrosilylation or annealing enabling a complete native oxide removal and a reduction of the defect density by up to two orders of magnitude. Moreover, when compared with only H\u2010terminated Si\u2010ncs we report an enhancement of the conductivity by up to a factor of 400 for films of HF etched and annealed Si\u2010ncs, which retain a defect density below that of untreated Si\u2010ncs even after several months of air exposure. Further, we demonstrate that HF etched and hydrosilylated Si\u2010ncs are extremely stable against oxidation and maintain a very low defect density after a long\u2010term storage in air, opening the possibility of device processing in ambient atmosphere.<\/jats:p>","DOI":"10.1002\/adfm.201101811","type":"journal-article","created":{"date-parts":[[2012,1,23]],"date-time":"2012-01-23T09:54:01Z","timestamp":1327312441000},"page":"1190-1198","source":"Crossref","is-referenced-by-count":45,"title":["Low\u2010Cost Post\u2010Growth Treatments of Crystalline Silicon Nanoparticles Improving Surface and Electronic Properties"],"prefix":"10.1002","volume":"22","author":[{"given":"Sabrina","family":"Niesar","sequence":"first","affiliation":[]},{"given":"Rui N.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"Andre R.","family":"Stegner","sequence":"additional","affiliation":[]},{"given":"Nadine","family":"Erhard","sequence":"additional","affiliation":[]},{"given":"Marco","family":"Hoeb","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Baumer","sequence":"additional","affiliation":[]},{"given":"Hartmut","family":"Wiggers","sequence":"additional","affiliation":[]},{"given":"Martin S.","family":"Brandt","sequence":"additional","affiliation":[]},{"given":"Martin","family":"Stutzmann","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2012,1,23]]},"reference":[{"key":"e_1_2_6_1_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1069156"},{"key":"e_1_2_6_2_2","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200600527"},{"key":"e_1_2_6_3_2","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1299"},{"key":"e_1_2_6_4_2","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.200701198"},{"key":"e_1_2_6_5_2","doi-asserted-by":"publisher","DOI":"10.1021\/nl101413d"},{"key":"e_1_2_6_6_2","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/42\/11\/113001"},{"key":"e_1_2_6_7_2","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.200801548"},{"key":"e_1_2_6_8_2","first-page":"2775","volume":"206","author":"Niesar S.","year":"2009","journal-title":"Phys. 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