{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,7]],"date-time":"2026-02-07T05:17:15Z","timestamp":1770441435567,"version":"3.49.0"},"reference-count":43,"publisher":"Wiley","issue":"17","license":[{"start":{"date-parts":[[2015,3,19]],"date-time":"2015-03-19T00:00:00Z","timestamp":1426723200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Adv Funct Materials"],"published-print":{"date-parts":[[2015,5]]},"abstract":"<jats:p>Here, a simple, nontoxic, and inexpensive \u201cwater\u2010inducement\u201d technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water\u2010induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin\u2010film transistors (TFTs). The WI indium\u2010zinc oxide (IZO) TFT integrated on SiO<jats:sub>2<\/jats:sub> dielectric, annealed at 300 \u00b0C for 2 h, exhibits a saturation mobility of 3.35 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup> and an on\u2010to\u2010off current ratio of \u224810<jats:sup>8<\/jats:sup>. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 \u00b0C are comparable with the TFTs annealed at 300 \u00b0C. Finally, fully WI IZO TFT based on YO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> dielectric is integrated and investigated. This TFT device can be regarded as \u201cgreen electronics\u201d in a true sense, because no organic\u2010related additives are used during the whole device fabrication process. The as\u2010fabricated IZO\/YO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> TFT exhibits excellent electron transport characteristics with low operating voltage (\u22481.5 V), small subthreshold swing voltage of 65 mV dec<jats:sup>\u22121<\/jats:sup> and the mobility in excess of 25 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>.<\/jats:p>","DOI":"10.1002\/adfm.201500056","type":"journal-article","created":{"date-parts":[[2015,3,19]],"date-time":"2015-03-19T16:25:45Z","timestamp":1426782345000},"page":"2564-2572","source":"Crossref","is-referenced-by-count":178,"title":["Low\u2010Temperature, Nontoxic Water\u2010Induced Metal\u2010Oxide Thin Films and Their Application in Thin\u2010Film Transistors"],"prefix":"10.1002","volume":"25","author":[{"given":"Guoxia","family":"Liu","sequence":"first","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P.R. China"}]},{"given":"Ao","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P.R. China"}]},{"given":"Huihui","family":"Zhu","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P.R. China"}]},{"given":"Byoungchul","family":"Shin","sequence":"additional","affiliation":[{"name":"Electronic Ceramics Center Dong\u2010Eui University  Busan 614\u2010714 Korea"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N, Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2010516 Caparica Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N, Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2010516 Caparica Portugal"}]},{"given":"Yiqian","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P.R. China"}]},{"given":"Fukai","family":"Shan","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P.R. 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