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Here, scandium oxide (ScO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic>) is fabricated as a TFT dielectric with excellent electrical properties using a novel water\u2010inducement method. The thin films are annealed at various temperatures and characterized by using X\u2010ray diffraction, atomic\u2010force microscopy, X\u2010ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> thin film exhibits a low\u2010leakage current density of 0.2 nA cm<jats:sup>\u22122<\/jats:sup> at 2 MV cm<jats:sup>\u22121<\/jats:sup>, a large areal capacitance of 460 nF cm<jats:sup>\u22122<\/jats:sup> at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n\u2010type InZnO (IZO) and p\u2010type CuO TFTs for testing. The water\u2010induced full oxide IZO\/ScO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, a large current ratio (<jats:italic>I<\/jats:italic><jats:sub>on<\/jats:sub>\/<jats:italic>I<\/jats:italic><jats:sub>off<\/jats:sub>) of 2.7 \u00d7 10<jats:sup>7<\/jats:sup> and high stability. Moreover, as far as we know it is the first time that solution\u2010processed p\u2010type oxide TFTs based on a high\u2010<jats:italic>k<\/jats:italic> dielectric are achieved. The as\u2010fabricated p\u2010type CuO\/ScO<jats:sub>x<\/jats:sub> TFTs exhibit a large <jats:italic>I<\/jats:italic><jats:sub>on<\/jats:sub>\/<jats:italic>I<\/jats:italic><jats:sub>off<\/jats:sub> of around 10<jats:sup>5<\/jats:sup> and a hole mobility of 0.8 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution\u2010processed p\u2010type TFTs, which represents a great step towards the achievement of low\u2010cost, all\u2010oxide, and low\u2010power consumption CMOS logics.<\/jats:p>","DOI":"10.1002\/adfm.201502612","type":"journal-article","created":{"date-parts":[[2015,10,23]],"date-time":"2015-10-23T02:31:57Z","timestamp":1445567517000},"page":"7180-7188","source":"Crossref","is-referenced-by-count":172,"title":["Water\u2010Induced Scandium Oxide Dielectric for Low\u2010Operating Voltage n\u2010 and p\u2010Type Metal\u2010Oxide Thin\u2010Film Transistors"],"prefix":"10.1002","volume":"25","author":[{"given":"Ao","family":"Liu","sequence":"first","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P. R. China"}]},{"given":"Guoxia","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P. R. China"}]},{"given":"Huihui","family":"Zhu","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P. R. China"}]},{"given":"Huijun","family":"Song","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P. R. China"}]},{"given":"Byoungchul","family":"Shin","sequence":"additional","affiliation":[{"name":"Electronic Ceramics Center DongEui University  Busan 614\u2013714 Korea"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2013516 Caparica Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2013516 Caparica Portugal"}]},{"given":"Fukai","family":"Shan","sequence":"additional","affiliation":[{"name":"College of Physics and Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 P. R. 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