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While the most widely employed systems exhibit filamentary resistive switching, interface\u2010type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria\u2010stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X\u2010ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.<\/jats:p>","DOI":"10.1002\/adfm.201702282","type":"journal-article","created":{"date-parts":[[2017,10,10]],"date-time":"2017-10-10T01:06:37Z","timestamp":1507597597000},"source":"Crossref","is-referenced-by-count":32,"title":["Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices"],"prefix":"10.1002","volume":"27","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4940-1668","authenticated-orcid":false,"given":"Benedikt","family":"Arndt","sequence":"first","affiliation":[{"name":"Peter Gr\u00fcnberg Institute Research Center J\u00fclich  Wilhelm\u2010Johnen\u2010Stra\u00dfe J\u00fclich 52425 Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4659-4329","authenticated-orcid":false,"given":"Francesco","family":"Borgatti","sequence":"additional","affiliation":[{"name":"Consiglio Nazionale delle Ricerche Istituto per lo Studio dei Materiali Nanostrutturati (CNR\u2010ISMN)  via P. 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