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Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high\u2010performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a\u2010IGZO) nanofiber arrays with low\u2010thermal\u2010budget of 350 \u00b0C and impressive device characteristics are achieved, including a \u03bcFE of 5.63 cm2 V<jats:sup>\u20131<\/jats:sup> s<jats:sup>\u20131<\/jats:sup> and superior on\/off current ratio of \u2248107. When ALD\u2010derived high\u2010k HfAlOx thin films are employed as gate dielectrics, the source\/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V<jats:sup>\u20131<\/jats:sup> s<jats:sup>\u20131<\/jats:sup>. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a\u2010IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low\u2010power, high\u2010performance flexible electronics.<\/jats:p>","DOI":"10.1002\/adfm.202310264","type":"journal-article","created":{"date-parts":[[2023,10,27]],"date-time":"2023-10-27T17:45:17Z","timestamp":1698428717000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":40,"title":["Electrospun Highly Aligned IGZO Nanofiber Arrays with Low\u2010Thermal\u2010Budget for Challenging Transistor and Integrated Electronics"],"prefix":"10.1002","volume":"34","author":[{"given":"Bo","family":"He","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering Anhui University  Hefei 230601 P. R. China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4711-0568","authenticated-orcid":false,"given":"Gang","family":"He","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering Anhui University  Hefei 230601 P. R. China"}]},{"given":"Li","family":"Zhu","sequence":"additional","affiliation":[{"name":"College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications  Nanjing 210003 P. R. China"}]},{"given":"Jingbiao","family":"Cui","sequence":"additional","affiliation":[{"name":"Department of Physics University of North Texas  Denton TX 76203 USA"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]}],"member":"311","published-online":{"date-parts":[[2023,10,27]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201103228"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4599"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/42\/3\/031101"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202213762"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.9b00164"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40843-016-5026-4"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.8b00593"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3262489"},{"key":"e_1_2_8_9_1","first-page":"12","volume":"33","author":"Guo Y. 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