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Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up\u2010scale production. Solution\u2010processing methods have been improved, being now a reliable technology that offers many advantages for resistive random\u2010access memory (RRAM) such as high versatility, large area uniformity, transparency, low\u2010cost and a simple fabrication of two\u2010terminal structures. Solution\u2010based metal oxide RRAM devices are emergent and promising non\u2010volatile memories for future electronics. In this review, a brief history of non\u2010volatile memories is highlighted as well as the present status of solution\u2010based metal oxide resistive random\u2010access memory (S\u2010RRAM). Then, a focus on describing the solution synthesis parameters of S\u2010RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S\u2010RRAM that will allow their large\u2010area manufacturing. 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