{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,22]],"date-time":"2026-08-22T12:27:00Z","timestamp":1787401620011,"version":"3.56.0"},"reference-count":38,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,8,22]],"date-time":"2026-08-22T00:00:00Z","timestamp":1787356800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,8,22]],"date-time":"2026-08-22T00:00:00Z","timestamp":1787356800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Effective tuning of the Schottky barrier, which determines charge transport across the metal\u2010semiconductor interface, is essential for optimizing the performance of electronics and optoelectronic devices. However, interfacial disorders and orbital overlap between metals and semiconductors induce Fermi\u2010level pinning (FLP), making the Schottky barrier height (SBH) largely insensitive to metal work function. Here, we demonstrate that depositing an ultrathin inorganic molecular crystal layer of Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    between metal and 2D semiconductors can eliminate FLP, enabling highly tunable SBH modulation. Owing to its van der Waals structure, Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    introduces no excess defects and protects the fragile 2D channel from metal deposition damage, yielding a clean, defect\u2010free interface. Incorporation of Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    tunneling layer significantly reduces the SBH in 2D MoS\n                    <jats:sub>2<\/jats:sub>\n                    transistors, and the polarity of 2D WSe\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based FET can be switched from n\u2010type to\n                    <jats:italic>p<\/jats:italic>\n                    \u2010type via adjusting the contact metal work function. The pinning factor turns from \u22120.11 to around \u22120.93, approaching the ideal Mott\u2010Schottky limit. This scalable strategy offers broad applicability in high\u2010performance 2D electronics.\n                  <\/jats:p>","DOI":"10.1002\/adma.74761","type":"journal-article","created":{"date-parts":[[2026,8,22]],"date-time":"2026-08-22T12:07:06Z","timestamp":1787400426000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Highly Tunable Schottky Barrier to 2D Semiconductors Enabled by an Inorganic\u2010Molecular\u2010Crystal Tunneling Layer"],"prefix":"10.1002","author":[{"given":"Lixin","family":"Liu","sequence":"first","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yimin","family":"Wei","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-3374-0720","authenticated-orcid":false,"given":"Kailang","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhibo","family":"Liu","sequence":"additional","affiliation":[{"name":"Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences  Shenyang China"},{"name":"School of Materials Science and Engineering University of Science and Technology of China  Shenyang China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-4510-9389","authenticated-orcid":false,"given":"Lanhao","family":"Qin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Yuan","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National University of Singapore  Singapore Singapore"},{"name":"Institute for Functional Intelligent Materials National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongshan","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bingrong","family":"Huang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yiran","family":"Ma","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Textile Materials and Advanced Processing School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan 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