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Amongst several challenges, developing and optimizing efficient electron transport layers that can be up\u2010scaled still remains a massive task. Admittance measurements on metal\u2013oxide\u2013semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge carrier transport layer. This work discloses a new pathway for a fundamental characterization of the oxide\/semiconductor interface in PSCs. Inverted MOS structures, that is, glass\/fluorine\u2010doped tin oxide\/tin oxide (SnO<jats:sub>2<\/jats:sub>)\/perovskite are fabricated and characterized allowing to perform a comparative study on the optoelectronic characteristics of the interface between the perovskite and sputtered SnO<jats:sub>2<\/jats:sub>. Admittance measurements allow to assess the interface fixed oxide charges (<jats:italic>Q<jats:sub>f<\/jats:sub><\/jats:italic>) and interface traps density (<jats:italic>D<jats:sub>it<\/jats:sub><\/jats:italic>), which are extremely relevant parameters that define interface properties of extraction layers. It is concluded that a 30\u00a0nm thick SnO<jats:sub>2<\/jats:sub> layer without annealing presents an additional recombination mechanism compared to the other studied layers, and a 20\u00a0nm thick SnO<jats:sub>2<\/jats:sub> layer without annealing presents the highest positive <jats:italic>Q<jats:sub>f<\/jats:sub><\/jats:italic> values. Thus, an effective method is shown for the characterization of the charge carrier transport layer\/perovskite interface using the analysis performed on perovskite\u2010based inverted MOS devices.<\/jats:p>","DOI":"10.1002\/admi.202101004","type":"journal-article","created":{"date-parts":[[2021,9,27]],"date-time":"2021-09-27T18:53:55Z","timestamp":1632768835000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Perovskite Metal\u2013Oxide\u2013Semiconductor Structures for Interface Characterization"],"prefix":"10.1002","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1622-0193","authenticated-orcid":false,"given":"Jos\u00e9 M. 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N.","family":"Oliveira","sequence":"additional","affiliation":[{"name":"INL\u2013International Iberian Nanotechnology Laboratory Avenida Mestre Jos\u00e9 Veiga  Braga 4715\u2010330 Portugal"},{"name":"Departamento de F\u00edsica and i3N Universidade de Aveiro Campus Universit\u00e1rio de Santiago  Aveiro 3810\u2010193 Portugal"}]},{"given":"Jo\u00e3o R. 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