{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T12:30:08Z","timestamp":1773232208096,"version":"3.50.1"},"reference-count":58,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2015,11,18]],"date-time":"2015-11-18T00:00:00Z","timestamp":1447804800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Adv Elect Materials"],"published-print":{"date-parts":[[2016,1]]},"abstract":"<jats:p>Indium tin oxide (ITO) is the current standard state\u2010of\u2010the\u2010art transparent conductive oxide (TCO), given its remarkable optical and electrical properties. However, the scarcity of indium carries an important drawback for the long\u2010term application due to its intensive use in many optoelectronic devices such as displays, solar cells, and interactive systems. Zinc oxide\u2010based TCOs can be a cost\u2010effective and viable alternative, but the limitations imposed by their transmittance versus resistivity tradeoff still keep them behind ITO. In this work, an in\u2010depth study of the structural and compositional material changes induced by specific postannealing treatments is presented, based on aluminum zinc oxide (AZO) and hydrogenated AZO (AZO:H) thin films grown by rf\u2010magnetron sputtering at room temperature that allows an extensive understanding of the films' electrical\/structural changes and the ability to tune their physical parameters to yield increasingly better performances, which put them in line with the best ITO quality standards. The present investigation comprises results of thermal annealing at atmospheric pressure, vacuum, forming gas, H<jats:sub>2<\/jats:sub> and Ar atmospheres and plasmas. Overall the study being performed leads to a decrease in resistivity above 40%, reaching <jats:italic>\u03c1<\/jats:italic> \u2248 3 \u00d7 10<jats:sup>\u22124<\/jats:sup> \u03a9 cm, with an average optical transmittance in the visible region around 88%. Such results are equivalent to the properties of state\u2010of\u2010the\u2010art ITO.<\/jats:p>","DOI":"10.1002\/aelm.201500287","type":"journal-article","created":{"date-parts":[[2015,11,18]],"date-time":"2015-11-18T10:38:57Z","timestamp":1447843137000},"source":"Crossref","is-referenced-by-count":77,"title":["Mapping the Electrical Properties of ZnO\u2010Based Transparent Conductive Oxides Grown at Room Temperature and Improved by Controlled Postdeposition Annealing"],"prefix":"10.1002","volume":"2","author":[{"given":"Andriy","family":"Lyubchyk","sequence":"first","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Ant\u00f3nio","family":"Vicente","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Bertrand","family":"Soule","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Pedro Urbano","family":"Alves","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Tiago","family":"Mateus","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Manuel J.","family":"Mendes","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Hugo","family":"\u00c1guas","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N Departamento de Ciencia dos Materiais Faculdade de Ciencias e Tecnologia Universidade Nova de Lisboa, and CEMOP\u2010UNINOVA  2829\u2010516 Caparica Portugal"}]}],"member":"311","published-online":{"date-parts":[[2015,11,18]]},"reference":[{"key":"e_1_2_6_1_1","unstructured":"Metal Oxide Backplanes Are Gaining Commercial Ground http:\/\/www.idtechex.com\/research\/articles\/metal\u2010oxide\u2010backplanes\u2010are\u2010gaining\u2010commercial\u2010ground\u201000007340.asp(accessed: January2015)."},{"key":"e_1_2_6_2_1","unstructured":"Transparent Conductive Coatings: Technologies and Global Markets Report Code: AVM105A http:\/\/www.bccresearch.com\/market\u2010research\/advanced\u2010materials\/transparent\u2010conductive\u2010coatings\u2010avm105a.html(accessed: June2014)."},{"key":"e_1_2_6_3_1","unstructured":"Global and China ITO Sputtering Targets Industry Report 2013\u20132016 http:\/\/www.researchmoz.us\/global\u2010and\u2010china\u2010ito\u2010sputtering\u2010targets\u2010industry\u2010report\u20102013\u2010\u20102016\u2010report.html(accessed: May2014)."},{"key":"e_1_2_6_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2053360"},{"key":"e_1_2_6_5_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.85.1012"},{"key":"e_1_2_6_6_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.045501"},{"key":"e_1_2_6_7_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-1638-9"},{"key":"e_1_2_6_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.materresbull.2009.02.019"},{"key":"e_1_2_6_9_1","doi-asserted-by":"publisher","DOI":"10.1116\/1.581085"},{"key":"e_1_2_6_10_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.81.125116"},{"key":"e_1_2_6_11_1","doi-asserted-by":"publisher","DOI":"10.3938\/jkps.56.576"},{"key":"e_1_2_6_12_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(98)01393-5"},{"key":"e_1_2_6_13_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2008.09.059"},{"key":"e_1_2_6_14_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.03.098"},{"key":"e_1_2_6_15_1","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-009-5086-5"},{"key":"e_1_2_6_16_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0257-8972(01)01660-7"},{"key":"e_1_2_6_17_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0042-207X(01)00319-0"},{"key":"e_1_2_6_18_1","volume-title":"SPIE Proceedings","author":"Martins R.","year":"2009"},{"key":"e_1_2_6_19_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2003.09.005"},{"key":"e_1_2_6_20_1","doi-asserted-by":"publisher","DOI":"10.1080\/14786430902886910"},{"key":"e_1_2_6_21_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.4935"},{"key":"e_1_2_6_22_1","doi-asserted-by":"publisher","DOI":"10.1039\/C4RA14799E"},{"key":"e_1_2_6_23_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.245202"},{"key":"e_1_2_6_24_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1795"},{"key":"e_1_2_6_25_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.materresbull.2014.04.050"},{"key":"e_1_2_6_26_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.44.4776"},{"key":"e_1_2_6_27_1","doi-asserted-by":"publisher","DOI":"10.1186\/1556-276X-9-562"},{"key":"e_1_2_6_28_1","volume-title":"PVSC","author":"Arnou P.","year":"2014"},{"key":"e_1_2_6_29_1","doi-asserted-by":"publisher","DOI":"10.1186\/1556-276X-7-639"},{"key":"e_1_2_6_30_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.96.205504"},{"key":"e_1_2_6_31_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/41\/9\/095303"},{"key":"e_1_2_6_32_1","unstructured":"Refractive Index Function of a Standard AZO Material http:\/\/materion.com\/ResourceCenter\/ProductData\/InorganicChemicals\/Oxides\/AZOTransparentConductiveCoating.aspx(accessed: July2015)."},{"key":"e_1_2_6_33_1","volume-title":"The Physics of Semiconductors","author":"Grundmann M.","year":"2006"},{"key":"e_1_2_6_34_1","doi-asserted-by":"publisher","DOI":"10.1364\/OE.20.000807"},{"key":"e_1_2_6_35_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.104.1508"},{"key":"e_1_2_6_36_1","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.7.105802"},{"key":"e_1_2_6_37_1","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/2\/28\/011"},{"key":"e_1_2_6_38_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.vacuum.2010.01.059"},{"key":"e_1_2_6_39_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.45.7860"},{"key":"e_1_2_6_40_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2906379"},{"key":"e_1_2_6_41_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2008.09.089"},{"key":"e_1_2_6_42_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2011.05.033"},{"key":"e_1_2_6_43_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.vacuum.2009.06.057"},{"key":"e_1_2_6_44_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3494046"},{"key":"e_1_2_6_45_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2007.03.071"},{"key":"e_1_2_6_46_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.372194"},{"key":"e_1_2_6_47_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.99.085502"},{"key":"e_1_2_6_48_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.vacuum.2009.12.015"},{"key":"e_1_2_6_49_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201203541"},{"key":"e_1_2_6_50_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.200901884"},{"key":"e_1_2_6_51_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/41\/9\/095303"},{"key":"e_1_2_6_52_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3108543"},{"key":"e_1_2_6_53_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2005.04.045"},{"key":"e_1_2_6_54_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.62.685"},{"key":"e_1_2_6_55_1","doi-asserted-by":"publisher","DOI":"10.1116\/1.580542"},{"key":"e_1_2_6_56_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.323240"},{"key":"e_1_2_6_57_1","first-page":"98","volume":"2","author":"Scherrer P.","year":"1918","journal-title":"G\u00f6ttinger Nachrichten Gesell."},{"key":"e_1_2_6_58_1","doi-asserted-by":"publisher","DOI":"10.2307\/2308924"}],"container-title":["Advanced Electronic Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Faelm.201500287","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aelm.201500287","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,6]],"date-time":"2025-10-06T18:42:20Z","timestamp":1759776140000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aelm.201500287"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,11,18]]},"references-count":58,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2016,1]]}},"alternative-id":["10.1002\/aelm.201500287"],"URL":"https:\/\/doi.org\/10.1002\/aelm.201500287","archive":["Portico"],"relation":{},"ISSN":["2199-160X","2199-160X"],"issn-type":[{"value":"2199-160X","type":"print"},{"value":"2199-160X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,11,18]]},"article-number":"1500287"}}