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In this report, high\u2010<jats:italic>k<\/jats:italic> HfO<jats:sub>2<\/jats:sub> dielectrics and amorphous ZnSnO (ZTO) semiconductors are synthesized via a simple and facile redox reaction by introducing perchloric acid (HClO<jats:sub>4<\/jats:sub>, PA) as oxidizer to eliminate the Cl residuals. Thermogravimetric analysis indicates that the thermal decomposition of PA\u2010involved HfCl<jats:sub>4<\/jats:sub>(PA\u2010HfO<jats:sub>2<\/jats:sub>) xerogel is completed at 350 \u00b0C, whereas the decomposition temperature of pristine HfCl<jats:sub>4<\/jats:sub> xerogel is higher than 450 \u00b0C. The optical, structural, morphological, compositional, and electrical properties of PA\u2010HfO<jats:sub>2<\/jats:sub> and the pristine HfO<jats:sub>2<\/jats:sub> dielectric films are investigated systematically. Meanwhile, by using chloride elimination reaction, PA\u2010ZTO semiconducting thin films are fabricated at various temperatures and their applications in thin\u2010film transistors (TFTs) are examined. Furthermore, the optimized PA\u2010ZTO channel layer is fabricated on PA\u2010HfO<jats:sub>2<\/jats:sub> dielectric. The resulting device exhibits high electrical performance and operational stability at a low voltage of 2 V, including high saturation mobility of 13.2 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, small subthreshold slope of 70 mV dec<jats:sup>\u22121<\/jats:sup>, current ratio of 10<jats:sup>8<\/jats:sup>, and threshold voltage shift of 0.05 V under positive bias stress for 3000 s. Finally, a low\u2010voltage resistor\u2010loaded inverter is built using PA\u2010ZTO\/PA\u2010HfO<jats:sub>2<\/jats:sub> TFT, exhibiting a linear relationship between supplied voltage and gain voltage and a maximum gain of 11 at 2.5 V.<\/jats:p>","DOI":"10.1002\/aelm.201600513","type":"journal-article","created":{"date-parts":[[2017,1,31]],"date-time":"2017-01-31T09:00:10Z","timestamp":1485853210000},"source":"Crossref","is-referenced-by-count":79,"title":["Redox Chloride Elimination Reaction: Facile Solution Route for Indium\u2010Free, Low\u2010Voltage, and High\u2010Performance Transistors"],"prefix":"10.1002","volume":"3","author":[{"given":"Ao","family":"Liu","sequence":"first","affiliation":[{"name":"College of Physics Qingdao University  Qingdao 266071 China"},{"name":"College of Electronic &amp; Information Engineering Qingdao University  Qingdao 266071 China"},{"name":"Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  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Qingdao University  Qingdao 266071 China"},{"name":"Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 China"}]},{"given":"Huihui","family":"Zhu","sequence":"additional","affiliation":[{"name":"Lab of New Fiber Materials and Modern Textile Growing Base for State Key Laboratory Qingdao University  Qingdao 266071 China"}]},{"given":"Byoungchul","family":"Shin","sequence":"additional","affiliation":[{"name":"Electronic Ceramics Center Dong\u2010Eui University  Busan 614\u2010714 South Korea"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA  Campus de Caparica 2829\u2010516 Caparica Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and 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