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Annealing temperature dependent microstructure, morphology, optical, electrical properties, and chemical bonding states of the WI ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> thin films are investigated by x\u2010ray diffraction, atomic force microscopy, optical spectroscopy, x\u2010ray photoelectron spectroscopy, and electrical measurements. A low leakage current density of 10<jats:sup>\u22128<\/jats:sup> A cm<jats:sup>\u22122<\/jats:sup> at 1 mV cm<jats:sup>\u22121<\/jats:sup> and a large areal capacitance of 531 nF cm<jats:sup>\u22122<\/jats:sup> at 20 Hz are observed for 400 \u00b0C\u2010annealed ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> thin films. To verify the possible applications of ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> thin films as the gate dielectric in thin\u2010film transistors (TFTs), WI In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\/ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> TFTs are integrated. 250 \u00b0C\u2010derived full oxide In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\/ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> TFTs have demonstrated high electrical performance and low operating voltage, including high <jats:italic>\u00b5<\/jats:italic><jats:sub>FE<\/jats:sub> of 18.82 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> S<jats:sup>\u22121<\/jats:sup>, threshold voltage shift of 0.46 V under positive bias stress for 3600 s, and a large <jats:italic>I<\/jats:italic><jats:sub>on<\/jats:sub>\/<jats:italic>I<\/jats:italic><jats:sub>off<\/jats:sub> of 6.01 \u00d7 10<jats:sup>7<\/jats:sup>, respectively. Finally, a low voltage resistor\u2010loaded unipolar inverter is built using In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\/ZrGdO<jats:italic><jats:sub>x<\/jats:sub><\/jats:italic> TFT, exhibiting a linear relationship between supplied voltage and gain voltage and a maximum gain of 7.4 at 2.5 V. These optimized parameters have achieved a low operating voltage of 2 V, which represents a great step toward the achievement of low\u2010cost, low\u2010power consumption, and large\u2010area all\u2010oxide flexible electronics.<\/jats:p>","DOI":"10.1002\/aelm.201800100","type":"journal-article","created":{"date-parts":[[2018,4,17]],"date-time":"2018-04-17T07:58:30Z","timestamp":1523951910000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":77,"title":["Nontoxic, Eco\u2010friendly Fully Water\u2010Induced Ternary Zr\u2013Gd\u2013O Dielectric for High\u2010Performance Transistors and Unipolar Inverters"],"prefix":"10.1002","volume":"4","author":[{"given":"Li","family":"Zhu","sequence":"first","affiliation":[{"name":"School of Physics and Materials Science Radiation Detection Materials &amp; Devices Lab Anhui University  Hefei 230039 P. R. 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