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Devices down to 4 \u00b5m<jats:sup>2<\/jats:sup> are fabricated using conventional photolithography processes, with an extraordinary yield of 100%. X\u2010ray photoelectron spectroscopy and transmission electron microscopy performed on the developed structures confirm the presence of a thin intermixed oxide layer (4\u20135\u00a0nm) containing Mo<jats:sup>6+<\/jats:sup> oxidation state at the interface with the bottom contact. This results in Schottky diode\u2010like characteristics at the pristine state with a rectification ratio of 3 orders of magnitude. The devices have electroforming\u2010free and area\u2010dependent analog resistive switching properties. Temperature analysis of resistive switching <jats:italic>I<\/jats:italic>\u2013<jats:italic>V<\/jats:italic> data reveals barrier height variations of the junction. Several synaptic functions, such as synaptic potentiation and depression as response to programmed pulses, short\u2010 to long\u2010term plasticity transition (STP to LTP) and \u201clearning experience\u201d properties are presented. The Mo\/IGZO\/Mo memristive device shows potential application of an electronic synapse for brain\u2010inspired computing application. Integration in System\u2010on\u2010Panel architectures is possible at negligible cost, because all materials are used in commercial IGZO thin\u2010film transistor fabrication.<\/jats:p>","DOI":"10.1002\/aelm.202000242","type":"journal-article","created":{"date-parts":[[2020,8,13]],"date-time":"2020-08-13T04:20:27Z","timestamp":1597292427000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":54,"title":["Noble\u2010Metal\u2010Free Memristive Devices Based on IGZO for Neuromorphic Applications"],"prefix":"10.1002","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2833-2942","authenticated-orcid":false,"given":"Maria","family":"Pereira","sequence":"first","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Jonas","family":"Deuermeier","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Ricardo","family":"Nogueira","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Patr\u00edcia Almeida","family":"Carvalho","sequence":"additional","affiliation":[{"name":"Materials Physics, SINTEF 0373 Oslo, Norway"},{"name":"CeFEMA Instituto Superior T\u00e9cnico (IST) Universidade de Lisboa  Lisboa 1049\u2010001 Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Asal","family":"Kiazadeh","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP\/UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]}],"member":"311","published-online":{"date-parts":[[2020,8,12]]},"reference":[{"key":"e_1_2_7_1_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578-019-0159-3"},{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0375-9601(02)01365-8"},{"key":"e_1_2_7_3_1","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/24\/38\/382001"},{"key":"e_1_2_7_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2015.2444094"},{"key":"e_1_2_7_5_1","first-page":"231","volume-title":"Int. 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