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The lattice location of <jats:sup>27<\/jats:sup>Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. The amphoteric nature of Mg is elucidated, i.e., the concurrent occupation of substitutional Ga and interstitial sites: following room temperature ultra\u2010low fluence (\u22482 \u00d7\u00a010<jats:sup>10<\/jats:sup>\u00a0cm<jats:sup>\u22122<\/jats:sup>)\u00a0implantation, the interstitial fraction of Mg is highest (20\u201324%) in GaN pre\u2010doped with stable Mg during growth, and lowest (2\u20136%) in <jats:italic>n<\/jats:italic>\u2010GaN:Si, while undoped GaN shows an intermediate interstitial fraction of 10\u201312%. Both for <jats:italic>p<\/jats:italic>\u2010 and <jats:italic>n<\/jats:italic>\u2010GaN prolonged implantations cause interstitial <jats:sup>27<\/jats:sup>Mg to approach the levels found for undoped GaN. Implanting above 400 \u00b0C progressively converts interstitial Mg to substitutional Ga sites due to the onset of Mg interstitial migration (estimated activation energy 1.5\u20132.3\u00a0eV) and combination with Ga vacancies. In all sample types, implantations above a fluence of 10<jats:sup>14<\/jats:sup>\u00a0cm<jats:sup>\u22122<\/jats:sup> result in &gt;95%\u00a0substitutional Mg. Ion implantation is hence a very efficient method to introduce Mg into substitutional Ga sites, i.e., challenges toward high electrical activation of implanted Mg are not related to lack of substitutional incorporation.<\/jats:p>","DOI":"10.1002\/aelm.202100345","type":"journal-article","created":{"date-parts":[[2021,6,19]],"date-time":"2021-06-19T10:24:22Z","timestamp":1624098262000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN"],"prefix":"10.1002","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7398-2904","authenticated-orcid":false,"given":"Ulrich","family":"Wahl","sequence":"first","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares Departamento de Engenharia e Ci\u00eancias Nucleares Instituto Superior T\u00e9cnico Universidade de Lisboa  Bobadela LRS 2695\u2010066 Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8848-0824","authenticated-orcid":false,"given":"Jo\u00e3o Guilherme","family":"Correia","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares Departamento de Engenharia e Ci\u00eancias Nucleares Instituto Superior T\u00e9cnico Universidade de Lisboa  Bobadela LRS 2695\u2010066 Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9318-2418","authenticated-orcid":false,"given":"\u00c2ngelo R. G.","family":"Costa","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares Departamento de Engenharia e Ci\u00eancias Nucleares Instituto Superior T\u00e9cnico Universidade de Lisboa  Bobadela LRS 2695\u2010066 Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6977-7569","authenticated-orcid":false,"given":"Eric","family":"David\u2010Bosne","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares Departamento de Engenharia e Ci\u00eancias Nucleares Instituto Superior T\u00e9cnico Universidade de Lisboa  Bobadela LRS 2695\u2010066 Portugal"}]},{"given":"Menno J.","family":"Kappers","sequence":"additional","affiliation":[{"name":"Cambridge Centre for Gallium Nitride University of Cambridge  Cambridge CB3 0FS UK"}]},{"given":"Manuel Ribeiro","family":"da Silva","sequence":"additional","affiliation":[{"name":"CICECO Institute of Materials Universidade de Aveiro  Aveiro 3810\u2010193 Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4061-7027","authenticated-orcid":false,"given":"Gertjan","family":"Lippertz","sequence":"additional","affiliation":[{"name":"Institute of Physics II University of Cologne  Cologne 50937"}]},{"given":"Tiago A. 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