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However, the requirements for a linear and symmetric synaptic weight update and low cycle\u2010to\u2010cycle (C2C) and device\u2010to\u2010device variability as well as the sneak\u2010path current issue have been delaying its further development. This study reports on a thin\u2010film amorphous oxide\u2010based 4\u00d74 1\u2010transistor 1\u2010memristor (1T1M) crossbar. The a\u2010IGZO crossbar is built on a flexible polyimide substrate, enabling IoT and wearable applications. In the novel framework, the thin\u2010film transistor and memristor are fabricated at the same level, with the same processing steps and sharing the same materials for all layers. The 1T1M cells show linear and symmetrical plasticity characteristic with low C2C variability. The memristor performs like an analog dot product engine and vector\u2013matrix multiplications in the 4\u00d74 crossbars is demonstrated experimentally, in which the sneak\u2010path current issue is successfully suppressed, resulting in a proof\u2010of\u2010concept for a cost\u2010effective, flexible artificial neural networks hardware.<\/jats:p>","DOI":"10.1002\/aelm.202200642","type":"journal-article","created":{"date-parts":[[2022,9,6]],"date-time":"2022-09-06T22:03:58Z","timestamp":1662501838000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":25,"title":["Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware"],"prefix":"10.1002","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2833-2942","authenticated-orcid":false,"given":"Maria Elias","family":"Pereira","sequence":"first","affiliation":[{"name":"i3N\/CENIMAT Department of Materials 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