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Although significant progress has been made in traditional marketable devices based on physical vapor deposition derived metal oxides, it has still been hindered by low yield and poor compatibility. Fortunately, developing solution\u2010based 1D nanofiber networks to act as the fundamental building blocks for transistor has proven to be a simpler, higher\u2010throughput approach. However, oxide transistors based on such princesses suffer from degraded carrier mobility and operational instability, preventing the ability of such devices from replacing present polycrystalline Si technologies. Herein, it is shown that double channel heterojunction transistors with high electron mobility (&gt;40\u00a0cm<jats:sup>2<\/jats:sup>\u00a0V<jats:sup>\u22121<\/jats:sup>\u00a0s<jats:sup>\u22121<\/jats:sup>) and operational stability can be achieved from electrospun double channels composed of In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> and ZnO layers. Adjusting the stacking order and the stacking density of In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> and ZnO layers can effectively optimize the interface electron trap, leading to the formation of 2D electron gas and the reduction of stress\u2010induced instability. These findings further elucidate the significant advance of electrospinning\u2010derived double channel heterojunction transistors toward practical applications for future low\u2010cost and high\u2010performance electronics.<\/jats:p>","DOI":"10.1002\/aelm.202201007","type":"journal-article","created":{"date-parts":[[2022,12,7]],"date-time":"2022-12-07T14:07:36Z","timestamp":1670422056000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Electrospun Stacked Dual\u2010Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture"],"prefix":"10.1002","volume":"9","author":[{"given":"Bo","family":"He","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering Anhui University  Hefei 230601 P. R. 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China"}]},{"given":"Jiangwei","family":"Liu","sequence":"additional","affiliation":[{"name":"Research Center for Functional Materials National Institute for Materials Science (NIMS)  Ibaraki 305\u20100044 Japan"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N, Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N, Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  Caparica 2829\u2010516 Portugal"}]}],"member":"311","published-online":{"date-parts":[[2022,12,7]]},"reference":[{"key":"e_1_2_7_1_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201103228"},{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2016.11.194"},{"key":"e_1_2_7_3_1","first-page":"2021","volume":"33","author":"Shi J. 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