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Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO\/SiO<jats:sub>2<\/jats:sub> TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field\u2010effect mobility (<jats:italic>\u00b5<\/jats:italic><jats:sub>FE<\/jats:sub>) of 6.38 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, the larger <jats:italic>I<\/jats:italic><jats:sub>ON<\/jats:sub>\/<jats:italic>I<\/jats:italic><jats:sub>OFF<\/jats:sub> of 4.12\u00a0\u00d7 10<jats:sup>7<\/jats:sup> and operation in the energy\u2010efficient enhancement\u2010mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD\u2010derived Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> films as the gate dielectric into TFTs devices, their electron mobility and <jats:italic>I<\/jats:italic><jats:sub>ON<\/jats:sub>\/<jats:italic>I<\/jats:italic><jats:sub>OFF<\/jats:sub> can be further improved to 37.82 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u22121<\/jats:sup> s<jats:sup>\u22121<\/jats:sup> and 2.92\u00a0\u00d7 10<jats:sup>8<\/jats:sup>, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor\u2010loaded unipolar inverter is built by using InZnO\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large\u2010scale electronics.<\/jats:p>","DOI":"10.1002\/aelm.202300032","type":"journal-article","created":{"date-parts":[[2023,3,9]],"date-time":"2023-03-09T23:41:19Z","timestamp":1678405279000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Electrospinning\u2010Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation"],"prefix":"10.1002","volume":"9","author":[{"given":"Bo","family":"He","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering Anhui University  Hefei 230601 P. R. 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China"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2010516 Caparica Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT\u2010I3N Faculty of Sciences and Technology New University of Lisbon and CEMOP\u2010UNINOVA Campus de Caparica  2829\u2010516 Caparica 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