{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,6]],"date-time":"2025-11-06T19:49:39Z","timestamp":1762458579618},"reference-count":34,"publisher":"Wiley","issue":"10","license":[{"start":{"date-parts":[[2007,10,11]],"date-time":"2007-10-11T00:00:00Z","timestamp":1192060800000},"content-version":"vor","delay-in-days":10,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Chemical Vapor Deposition"],"published-print":{"date-parts":[[2007,10]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>In this work we report on the structure and magnetic and electrical transport properties of CrO<jats:sub>2<\/jats:sub> films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO<jats:sub>3<\/jats:sub> precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410\u2009\u00b0C, and oxygen carrier gas flow rates of 50\u2013500\u2009sccm, showing that it is viable to grow highly oriented <jats:italic>a<\/jats:italic>\u2010axis CrO<jats:sub>2<\/jats:sub> films at temperatures as low as 330\u2009\u00b0C i.e., 60\u201370\u2009\u00b0C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass\u2010transport mechanisms are identified. The growth of a Cr<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330\u2009\u00b0C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.<\/jats:p>","DOI":"10.1002\/cvde.200706592","type":"journal-article","created":{"date-parts":[[2007,10,11]],"date-time":"2007-10-11T12:16:25Z","timestamp":1192104985000},"page":"537-545","source":"Crossref","is-referenced-by-count":21,"title":["Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO<sub>2<\/sub> on Al<sub>2<\/sub>O<sub>3<\/sub> (0001)"],"prefix":"10.1002","volume":"13","author":[{"given":"P.\u2009M.","family":"Sousa","sequence":"first","affiliation":[]},{"given":"S.\u2009A.","family":"Dias","sequence":"additional","affiliation":[]},{"given":"O.","family":"Conde","sequence":"additional","affiliation":[]},{"given":"A.\u2009J.","family":"Silvestre","sequence":"additional","affiliation":[]},{"given":"W.\u2009R.","family":"Branford","sequence":"additional","affiliation":[]},{"given":"B.","family":"Morris","sequence":"additional","affiliation":[]},{"given":"K.\u2009A.","family":"Yates","sequence":"additional","affiliation":[]},{"given":"L.\u2009F.","family":"Cohen","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2007,10,11]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1088\/0305-4608\/16\/9\/002"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.59.2788"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.282.5386.85"},{"key":"e_1_2_1_5_2","unstructured":"H. Imamura S. Takahashi S. Maekawa inConcepts in Spin Electronics (Ed: S. Maekawa) Oxford University Press Oxford UK2006 p.\u2009378."},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1447879"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.278.5343.1607"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.124491"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.69.220413"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature04499"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1080\/10408437708243431"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.364682"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(91)90349-3"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1557\/PROC-614-F10.4.1"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1343846"},{"key":"e_1_2_1_16_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2005.01.061"},{"key":"e_1_2_1_17_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1451881"},{"key":"e_1_2_1_18_2","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-004-2795-7"},{"key":"e_1_2_1_19_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.17.249"},{"key":"e_1_2_1_20_2","doi-asserted-by":"publisher","DOI":"10.1016\/0025-5408(79)90231-9"},{"key":"e_1_2_1_21_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.58.11597"},{"key":"e_1_2_1_22_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.123050"},{"key":"e_1_2_1_23_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.369807"},{"key":"e_1_2_1_24_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.125213"},{"key":"e_1_2_1_25_2","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/14\/1\/302"},{"key":"e_1_2_1_26_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1331343"},{"key":"e_1_2_1_27_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.64.180408"},{"key":"e_1_2_1_28_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.126782"},{"key":"e_1_2_1_29_2","doi-asserted-by":"publisher","DOI":"10.1002\/cvde.200304139"},{"key":"e_1_2_1_30_2","doi-asserted-by":"publisher","DOI":"10.1002\/cvde.200604233"},{"key":"e_1_2_1_31_2","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.514-516.289"},{"key":"e_1_2_1_32_2","unstructured":"B. E. Warren X\u2010ray Diffraction Dover Publications Inc. New York1990."},{"key":"e_1_2_1_33_2","doi-asserted-by":"crossref","unstructured":"M. Ohring The Materials Science of Thin Films Academic Press London1992.","DOI":"10.1016\/B978-0-08-051118-4.50012-8"},{"key":"e_1_2_1_34_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.86.5585"},{"key":"e_1_2_1_35_2","unstructured":"S. M. Watts Ph.D. thesis Florida State University Tallahassee2002."}],"container-title":["Chemical Vapor Deposition"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fcvde.200706592","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/cvde.200706592","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,11,15]],"date-time":"2023-11-15T08:25:06Z","timestamp":1700036706000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/cvde.200706592"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,10]]},"references-count":34,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2007,10]]}},"alternative-id":["10.1002\/cvde.200706592"],"URL":"https:\/\/doi.org\/10.1002\/cvde.200706592","archive":["Portico"],"relation":{},"ISSN":["0948-1907","1521-3862"],"issn-type":[{"value":"0948-1907","type":"print"},{"value":"1521-3862","type":"electronic"}],"subject":[],"published":{"date-parts":[[2007,10]]}}}