{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,30]],"date-time":"2025-09-30T11:06:19Z","timestamp":1759230379484},"reference-count":25,"publisher":"Wiley","issue":"S1","license":[{"start":{"date-parts":[[2009,11,20]],"date-time":"2009-11-20T00:00:00Z","timestamp":1258675200000},"content-version":"vor","delay-in-days":172,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"name":"Portuguese Foundation for Science and Technology","award":["SFRH\/BPD\/41379\/2007"],"award-info":[{"award-number":["SFRH\/BPD\/41379\/2007"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Plasma Processes &amp;amp; Polymers"],"published-print":{"date-parts":[[2009,6]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>B\u2013C and B\u2013C:Si films were deposited by r.f. magnetron sputtering from a hot\u2010pressed B<jats:sub>4<\/jats:sub>C polycrystalline target with Si pieces placed on the preferentially eroded zone. The effect of Si content, ranging from 2 to 6\u2009at.\u2010%, on the B\u2013C films was studied at a fixed substrate bias of \u221270\u2009V. Preliminary depositions with different substrate bias showed that with \u221270\u2009V the deposition of free carbon was avoided. All deposited films were X\u2010ray diffraction (XRD) amorphous, and the result was confirmed by Fourier transform infrared spectroscopy (FTIR). Si\u2010containing films were harder than Si\u2010free ones, reaching 30\u2009GPa for compositions up to 4.5\u2009at.\u2010% Si. After thermal annealing of the B\u2013C:Si films up to 700\u2009\u00b0C, an increase of the hardness was observed. The maximum hardness of 37\u2009GPa was obtained for 2\u2009at.\u2010% Si film annealed at 600\u2009\u00b0C, which corresponds to an increase of \u223c23% in relation to the as\u2010deposited conditions. No vestiges of crystallinity were found either by XRD or FTIR analysis suggesting that the structure of the Si\u2010containing films consisted of a local order arrangement of boron\u2010rich icosahedral units.<\/jats:p>","DOI":"10.1002\/ppap.200930415","type":"journal-article","created":{"date-parts":[[2009,7,1]],"date-time":"2009-07-01T01:46:36Z","timestamp":1246412796000},"source":"Crossref","is-referenced-by-count":4,"title":["Silicon Effect on the Hardness of r.f. 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