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The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (\u226560 cm<jats:sup>2<\/jats:sup> V<jats:sup>\u20131<\/jats:sup> s<jats:sup>\u20131<\/jats:sup>) achieved.  The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline\/polycrystalline semi\u2010conductors, explained mainly by the presence of charged structural defects in excess of 4 \u00d7 10<jats:sup>10<\/jats:sup> cm<jats:sup>\u20132<\/jats:sup> that scatter the electrons that pass through them. (\u00a9 2005 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssa.200521020","type":"journal-article","created":{"date-parts":[[2005,6,10]],"date-time":"2005-06-10T09:47:26Z","timestamp":1118396846000},"source":"Crossref","is-referenced-by-count":108,"title":["Transport in high mobility amorphous wide band gap indium zinc oxide films"],"prefix":"10.1002","volume":"202","author":[{"given":"R.","family":"Martins","sequence":"first","affiliation":[]},{"given":"P.","family":"Barquinha","sequence":"additional","affiliation":[]},{"given":"A.","family":"Pimentel","sequence":"additional","affiliation":[]},{"given":"L.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2005,6,10]]},"reference":[{"key":"e_1_2_3_2_2","doi-asserted-by":"crossref","unstructured":"MRS Bull. 2000 25 8 Transparent Conducting Oxides (Special Issue)","DOI":"10.1557\/BF03546457"},{"key":"e_1_2_3_3_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1085276"},{"key":"e_1_2_3_4_2","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200400368"},{"key":"e_1_2_3_5_2","doi-asserted-by":"crossref","unstructured":"H.OhtaandH.Hosono Mater. 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