{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T20:49:39Z","timestamp":1759178979945},"reference-count":16,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2007,7,31]],"date-time":"2007-07-31T00:00:00Z","timestamp":1185840000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2007,8]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The differences in the secondary processes proceeding in the silicon layer of SOI and reference bulk silicon wafers are revealed by using High\u2010Resolution X\u2010ray diffraction and Rutherford Backscattering spectroscopy methods. The damage depth profiles in the implanted layers described by both strain and static Debye\u2013Waller factor profiles, were reconstructed from the diffraction patterns using an autofitting procedure, based on a genetic algorithm. The contribution of diffuse scattering was excluded using the triple\u2010crystal diffractometry technique. The defect density profiles were obtained from the RBS\/Channelling measurements, which were carried out using <jats:sup>4<\/jats:sup>He<jats:sup>+<\/jats:sup> beam at 2.0 MeV. The DICADA code, based on the theoretical description of dechanneling was used to interpret the RBS\/C data. Accumulation kinetics, spatial distribution, and concentration of radiation\u2010induced defects in the topmost silicon layer of SOI and a bulk silicon were shown to be essentially different. The influence of the fields was shown to lead to the loss of crystallinity of the thin surface layer of silicon in SOI due to accumulation of vacancy\u2010type defects and increase of concentration of interstitial atoms near the internal interphase boundary \u201cSi\u2013SiO<jats:sub>2<\/jats:sub>\u201d. (\u00a9 2007 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssa.200675698","type":"journal-article","created":{"date-parts":[[2007,7,31]],"date-time":"2007-07-31T10:18:35Z","timestamp":1185877115000},"page":"2645-2650","source":"Crossref","is-referenced-by-count":1,"title":["Radiation\u2010induced structural transformations in a silicon layer of SOI"],"prefix":"10.1002","volume":"204","author":[{"given":"K. D.","family":"Shcherbachev","sequence":"first","affiliation":[]},{"given":"V. T.","family":"Bublik","sequence":"additional","affiliation":[]},{"given":"V. N.","family":"Mordkovich","sequence":"additional","affiliation":[]},{"given":"D. M.","family":"Pazhin","sequence":"additional","affiliation":[]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"N. P.","family":"Barradas","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2007,7,31]]},"reference":[{"key":"e_1_2_1_2_2","unstructured":"L. S.Smirnov(Ed.) Physical processes in irradiated semiconductors (Nauka Novosibirsk 1977) p. 254 (in Russian)."},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1016\/0168-583X(92)95799-W"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-583X(97)00381-9"},{"key":"e_1_2_1_5_2","first-page":"14","volume":"34","author":"Lyndard J.","year":"1965","journal-title":"Mat. Fys. Medd."},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1080\/00337577208231151"},{"key":"e_1_2_1_7_2","first-page":"187","volume":"160","author":"Chtcherbatchev K. D.","year":"1997","journal-title":"Inst. Phys. Conf. Ser."},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.336759"},{"key":"e_1_2_1_9_2","unstructured":"K. D.Shcherbachevet al. in:Proceedings of the 6thBiennial Conference on High Resolution X\u2010Ray Diffraction and Imaging Grenoble and Aussois France 10\u201314 September 2002 p. 21."},{"key":"e_1_2_1_10_2","first-page":"626","volume":"69","author":"Shcherbachev K. D.","year":"2003","journal-title":"Ind. Lab."},{"key":"e_1_2_1_11_2","unstructured":"M. A.Krivoglaz X\u2010ray and Neutron Diffraction in Non ideal Crystals (Naukova Dumka Kiev 1983) p. 407 (in Russian)."},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/26\/4A\/005"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1016\/0168-583X(95)00706-7"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.120842"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1109\/23.101218"},{"key":"e_1_2_1_16_2","unstructured":"G. D.Watkins J. R.Troxell andA. P.Chatterjee in: Defects and Radiation Effects in Semiconductors Inst. Phys. Conf. Ser. 46 (IOP London\u2013Bristol 1979) pp. 16\u201330."},{"key":"e_1_2_1_17_2","first-page":"1239","volume":"30","author":"Saralidze Z.","year":"1988","journal-title":"Solid State Phys."}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.200675698","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.200675698","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,12]],"date-time":"2023-09-12T13:53:15Z","timestamp":1694526795000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.200675698"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,7,31]]},"references-count":16,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2007,8]]}},"alternative-id":["10.1002\/pssa.200675698"],"URL":"https:\/\/doi.org\/10.1002\/pssa.200675698","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2007,7,31]]}}}