{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,30]],"date-time":"2025-09-30T11:08:37Z","timestamp":1759230517811},"reference-count":19,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2008,7,17]],"date-time":"2008-07-17T00:00:00Z","timestamp":1216252800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2008,8]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This work reports on the fabrication and characterization of indium oxide semiconducting films and their application in thin\u2010film transistors (TFTs). The films have been deposited at room temperature by oxygen ion beam assisted e\u2010beam evaporation. The influence of deposition conditions on film properties including the crystal structure, conductivity, and intrinsic stress is analyzed. It is found that the electrical properties of indium oxide films can be engineered from metallic to insulating and the film structure can be varied from amorphous to microcrystalline by adjusting deposition rate, oxygen ion energy, and ion beam flux. Furthermore, the highly\u2010resistive films with considerable microstructural crystallinity exhibit n\u2010type field\u2010effect behaviour. A field\u2010effect mobility of 1.4 cm<jats:sup>2<\/jats:sup>\/V s, and ON\/OFF current ratio of \u223c10<jats:sup>6<\/jats:sup> are observed for transistors with a silicon dioxide gate dielectric. (\u00a9 2008 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssa.200778883","type":"journal-article","created":{"date-parts":[[2008,7,17]],"date-time":"2008-07-17T14:04:30Z","timestamp":1216303470000},"page":"1925-1928","source":"Crossref","is-referenced-by-count":10,"title":["Indium oxide thin\u2010film transistor by reactive ion beam assisted deposition"],"prefix":"10.1002","volume":"205","author":[{"given":"Y.","family":"Vygranenko","sequence":"first","affiliation":[]},{"given":"K.","family":"Wang","sequence":"additional","affiliation":[]},{"given":"M.","family":"Vieira","sequence":"additional","affiliation":[]},{"given":"A.","family":"Nathan","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,8,4]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1534627"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1553997"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1790587"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/37\/20\/006"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1843286"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1862767"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1905800"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2006.03.031"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1117\/12.681442"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1755"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1538335"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1179\/095066090790323975"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1116\/1.1566789"},{"key":"e_1_2_1_15_2","doi-asserted-by":"crossref","unstructured":"R.Gonz\u00e1lez\u2010Elipe F.Yubero andJ. 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