{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,8]],"date-time":"2025-10-08T16:10:59Z","timestamp":1759939859138},"reference-count":20,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2008,7,16]],"date-time":"2008-07-16T00:00:00Z","timestamp":1216166400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2008,8]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Indium tin oxide (ITO) has been used as the prefered electrode material for the emerging area of transparent electronics, namely for thin\u2010film transistors (TFTs) based on oxide semiconductors. This work pretends to investigate different materials to replace ITO in inverted\u2010staggered TFTs based on gallium\u2013indium\u2013zinc oxide (GIZO), one of the most promissing oxide semiconductors for TFTs. The analyzed electrode materials are indium\u2013zinc oxide (IZO), Ti, Mo and Ti\/Au. Devices are analyzed with special focus on the contact resistance fundamentals, including the extraction of source\/ drain series resistances and TFTs intrinsic parameters, such as intrinsic mobility (<jats:italic>\u00b5<\/jats:italic><jats:sub>i<\/jats:sub>) and intrinsic threshold voltage (<jats:italic>V<\/jats:italic><jats:sub>Ti<\/jats:sub>). The obtained contact resistance values are between 10 k\u03a9 and 20 k\u03a9, and the best devices have field effect mobility (<jats:italic>\u00b5<\/jats:italic><jats:sub>FE<\/jats:sub>) close to 25 cm<jats:sup>2<\/jats:sup>\/V s and on\/off ratio close to 10<jats:sup>8<\/jats:sup>. (\u00a9 2008 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssa.200778940","type":"journal-article","created":{"date-parts":[[2008,7,16]],"date-time":"2008-07-16T06:42:30Z","timestamp":1216190550000},"page":"1905-1909","source":"Crossref","is-referenced-by-count":32,"title":["The role of source and drain material in the performance of GIZO based thin\u2010film transistors"],"prefix":"10.1002","volume":"205","author":[{"given":"P.","family":"Barquinha","sequence":"first","affiliation":[]},{"given":"A.","family":"Vil\u00e0","sequence":"additional","affiliation":[]},{"given":"G.","family":"Gon\u00e7alves","sequence":"additional","affiliation":[]},{"given":"L.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"J.","family":"Morante","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,8,4]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1085276"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.115759"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1542677"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200400368"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1083212"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1843286"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1862767"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2006.01.067"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2495754"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2353811"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature03090"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.348716"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.351809"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(02)00210-1"},{"key":"e_1_2_1_16_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1345805"},{"key":"e_1_2_1_17_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(02)00204-6"},{"key":"e_1_2_1_18_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2402349"},{"key":"e_1_2_1_19_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2120895"},{"key":"e_1_2_1_20_2","volume":"90","author":"Kim M.","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"e_1_2_1_21_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.40.530"}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.200778940","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.200778940","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,11,22]],"date-time":"2023-11-22T16:37:30Z","timestamp":1700671050000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.200778940"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,8]]},"references-count":20,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2008,8]]}},"alternative-id":["10.1002\/pssa.200778940"],"URL":"https:\/\/doi.org\/10.1002\/pssa.200778940","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2008,8]]}}}