{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T05:40:40Z","timestamp":1694583640046},"reference-count":14,"publisher":"Wiley","issue":"9","license":[{"start":{"date-parts":[[2009,7,27]],"date-time":"2009-07-27T00:00:00Z","timestamp":1248652800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2009,9]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot wire (HW) and radio\u2010frequency plasma\u2010enhanced chemical vapour deposition (RF\u2010PECVD) were erbium\u2010implanted. Their pre\u2010implantation structural properties and post\u2010implantation optical properties were studied and correlated. After 1\u2009h annealing at 150\u2009\u00b0C in nitrogen atmosphere only amorphous films showed photoluminescence (PL) activity at 1.54\u2009\u00b5m, measured at 5\u2009K. After further annealing at 300\u2009\u00b0C for 1\u2009h, all the samples exhibited a sharp PL peak positioned at 1.54\u2009\u00b5m, with an FWHM of \u223c5\u2009nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in nanocrystalline films PL emission was much stronger in samples deposited by RF than by HW. There was no noticeable difference in Er<jats:sup>3+<\/jats:sup> PL activity between films implanted with 1\u2009\u00d7\u200910<jats:sup>14<\/jats:sup> and 5\u2009\u00d7\u200910<jats:sup>15<\/jats:sup>\u2009atoms\u2009cm<jats:sup>\u22122<\/jats:sup> Er doses.<\/jats:p>","DOI":"10.1002\/pssa.200881785","type":"journal-article","created":{"date-parts":[[2009,7,27]],"date-time":"2009-07-27T07:26:47Z","timestamp":1248679607000},"page":"2161-2165","source":"Crossref","is-referenced-by-count":0,"title":["Structural and photoluminescence studies of erbium\u2010implanted nanocrystalline silicon thin films"],"prefix":"10.1002","volume":"206","author":[{"given":"M. F.","family":"Cerqueira","sequence":"first","affiliation":[]},{"given":"P.","family":"Alpuim","sequence":"additional","affiliation":[]},{"given":"S. A.","family":"Filonovich","sequence":"additional","affiliation":[]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"A. 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