{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T05:40:41Z","timestamp":1694583641416},"reference-count":13,"publisher":"Wiley","issue":"9","license":[{"start":{"date-parts":[[2009,7,29]],"date-time":"2009-07-29T00:00:00Z","timestamp":1248825600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2009,9]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Indium molybdenum oxide thin films were deposited using different radio\u2010frequency sputtering units on glass substrates at room temperature from an In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> (95\u2009wt.%): Mo (5\u2009wt.%) target. The film thickness ranges between 160 and 275\u2009nm. The chamber volume of Unit\u20101 was \u223c2.4 times larger than that of Unit\u20102. Apart from the chamber volume, a significant difference between the two units was the sputtering pressure. The films were characterized by their structural, morphological, optical, and electrical properties. A strong reflection from (222) plane was obtained for the \u223c275\u2009nm thick films deposited in Unit\u20101. The films deposited with &lt;275\u2009nm thickness and those deposited in Unit\u20102 are close to amorphous with a small crystalline fraction. The surface of the films deposited in Unit\u20101 is comprised of randomly arranged crystallites, which is restructured with the increasing film thickness to become a well defined \u201crice field\u201d like structure (275\u2009nm thick). The films deposited in Unit\u20102 are comprised of many holes on the surface that is presumably due to back sputtering. The average visible transmittance calculated in the wavelength between 400 and 800\u2009nm ranges from 70 to 82%. The optical band gap is found to vary between 3.80 and 3.86\u2009eV. The lowest bulk resistivity of the films deposited in Unit\u20101 was increased from \u223c4.06\u2009\u00d7\u200910<jats:sup>\u22123<\/jats:sup> to 4.07\u2009\u00d7\u200910<jats:sup>\u22121<\/jats:sup>\u2009\u03a9\u2009cm when deposited in Unit\u20102. The carrier concentration was decreased from 1.31\u2009\u00d7\u200910<jats:sup>20<\/jats:sup> to 1.03\u2009\u00d7\u200910<jats:sup>18<\/jats:sup>\u2009cm<jats:sup>\u22123<\/jats:sup> but the Hall mobility increased from 11.7 to 15.0\u2009cm<jats:sup>2<\/jats:sup>\u2009 \u2009V<jats:sup>\u22121<\/jats:sup>\u2009 \u2009s<jats:sup>\u22121<\/jats:sup>.<\/jats:p>","DOI":"10.1002\/pssa.200881796","type":"journal-article","created":{"date-parts":[[2009,7,29]],"date-time":"2009-07-29T07:15:51Z","timestamp":1248851751000},"page":"2123-2127","source":"Crossref","is-referenced-by-count":3,"title":["Indium molybdenum oxide thin films: A comparative study by two different RF sputtering systems"],"prefix":"10.1002","volume":"206","author":[{"given":"E.","family":"Elangovan","sequence":"first","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2009,9,9]]},"reference":[{"key":"e_1_2_6_2_2","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1002\/0470870508","volume-title":"Flexible Flat Panel Displays","author":"Crawford G. 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