{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T01:33:20Z","timestamp":1774316000451,"version":"3.50.1"},"reference-count":24,"publisher":"Wiley","issue":"9","license":[{"start":{"date-parts":[[2009,7,27]],"date-time":"2009-07-27T00:00:00Z","timestamp":1248652800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2009,9]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Copper oxide thin films were obtained by annealing (temperature ranging between 100 and 450\u2009\u00b0C) the metallic Cu films deposited on glass substrates by e\u2010beam evaporation. XRD studies confirmed that the cubic Cu phase of the as\u2010deposited films changes into single cubic Cu<jats:sub>2<\/jats:sub>O phase and single monoclinic CuO phase, depending on the annealing conditions. The crystallite size is varied between \u223c12 and 31\u2009nm. The lattice parameters of cubic Cu and Cu<jats:sub>2<\/jats:sub>O phases are estimated to \u223c3.60 and \u223c4.26\u2009\u00c5, respectively. The films with Cu<jats:sub>2<\/jats:sub>O phase showed p\u2010type characteristics. The conductivity is decreased linearly with the decreasing temperature (1\/<jats:italic>T<\/jats:italic>), which has confirmed the semiconductor nature of the deposited films. The calculated activation energy is varied between 0.10 and 0.16\u2009eV. The surface microstructure is changed depending on the variation in the annealing temperature. The poor transmittance of the as\u2010deposited films (&lt;1%) is increased to a maximum of \u223c80% (800\u2009nm) on annealing at 200\u2009\u00b0C. The estimated direct allowed band gap is varied between 1.73 and 2.89\u2009eV.<\/jats:p>","DOI":"10.1002\/pssa.200881797","type":"journal-article","created":{"date-parts":[[2009,7,27]],"date-time":"2009-07-27T07:27:40Z","timestamp":1248679660000},"page":"2143-2148","source":"Crossref","is-referenced-by-count":68,"title":["Electrical, structural and optical characterization of copper oxide thin films as a function of post annealing temperature"],"prefix":"10.1002","volume":"206","author":[{"given":"V.","family":"Figueiredo","sequence":"first","affiliation":[]},{"given":"E.","family":"Elangovan","sequence":"additional","affiliation":[]},{"given":"G.","family":"Gon\u00e7alves","sequence":"additional","affiliation":[]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"S.H.K.","family":"Park","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2009,9,9]]},"reference":[{"key":"e_1_2_6_2_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.vacuum.2005.03.011"},{"key":"e_1_2_6_3_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0927-0248(00)00364-0"},{"key":"e_1_2_6_4_2","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.5.141"},{"key":"e_1_2_6_5_2","doi-asserted-by":"publisher","DOI":"10.1016\/0379-6787(88)90065-8"},{"key":"e_1_2_6_6_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.38.11322"},{"key":"e_1_2_6_7_2","doi-asserted-by":"publisher","DOI":"10.1039\/b611969g"},{"key":"e_1_2_6_8_2","first-page":"75","volume":"4","author":"Arijit C.","year":"2003","journal-title":"Rev. Adv. Mater. Sci."},{"key":"e_1_2_6_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0927-0248(01)00068-X"},{"key":"e_1_2_6_10_2","doi-asserted-by":"publisher","DOI":"10.1007\/s10854-006-8231-3"},{"key":"e_1_2_6_11_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0169-4332(99)00239-1"},{"key":"e_1_2_6_12_2","doi-asserted-by":"publisher","DOI":"10.1007\/BF02711241"},{"key":"e_1_2_6_13_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.solener.2005.10.012"},{"key":"e_1_2_6_14_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(00)01058-0"},{"key":"e_1_2_6_15_2","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(92)90286-K"},{"key":"e_1_2_6_16_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2003.09.015"},{"key":"e_1_2_6_17_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(97)01203-0"},{"key":"e_1_2_6_18_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0927-0248(98)00128-7"},{"key":"e_1_2_6_19_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2007.12.019"},{"key":"e_1_2_6_20_2","first-page":"16","volume-title":"Comprehensive Inorganic Chemistry","author":"Trotman\u2010Dickenson A. F.","year":"1973"},{"key":"e_1_2_6_21_2","first-page":"99","volume-title":"Elements of X\u2010ray Diffraction","author":"Cullity B. D.","year":"1956"},{"key":"e_1_2_6_22_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0169-4332(03)00485-9"},{"key":"e_1_2_6_23_2","first-page":"34","volume-title":"Optical Processes in Semiconductors","author":"Pankove J. I.","year":"1971"},{"key":"e_1_2_6_24_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.03.126"},{"key":"e_1_2_6_25_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(03)01156-4"}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.200881797","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.200881797","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,12]],"date-time":"2023-09-12T16:45:23Z","timestamp":1694537123000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.200881797"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,9]]},"references-count":24,"journal-issue":{"issue":"9","published-print":{"date-parts":[[2009,9]]}},"alternative-id":["10.1002\/pssa.200881797"],"URL":"https:\/\/doi.org\/10.1002\/pssa.200881797","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2009,9]]}}}