{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,18]],"date-time":"2025-11-18T20:49:57Z","timestamp":1763498997069},"reference-count":13,"publisher":"Wiley","issue":"7","license":[{"start":{"date-parts":[[2010,5,31]],"date-time":"2010-05-31T00:00:00Z","timestamp":1275264000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2010,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n\u2010type conductivity. The fabrication of a transparent p\u2010type semiconductor with good optoelectronic properties (comparable to those of n\u2010type: InO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>, ITO, ZnO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu<jats:sub>2<\/jats:sub>S is a p\u2010type narrow\u2010band\u2010gap material with an average optical transmittance of about 60% in the visible range for 50\u2009nm thick films. However, due to its high conductivity at room temperature, 10\u2009nm in thickness seems to be appropriate for device use. Cu<jats:sub>2<\/jats:sub>S thin films with 10\u2009nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p\u2010type semiconductors. In this work Cu<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>S thin films were deposited on alkali\u2010free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p\u2010type thin film transistor. In our Cu<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>S thin films, p\u2010type high conductivity with a total visible transmittance of about 50% have been achieved.<\/jats:p>","DOI":"10.1002\/pssa.200983731","type":"journal-article","created":{"date-parts":[[2010,5,31]],"date-time":"2010-05-31T18:43:51Z","timestamp":1275331431000},"page":"1652-1654","source":"Crossref","is-referenced-by-count":16,"title":["Optoelectronic properties of transparent p\u2010type semiconductor Cu<sub><i>x<\/i><\/sub>S thin films"],"prefix":"10.1002","volume":"207","author":[{"given":"P.","family":"Parreira","sequence":"first","affiliation":[]},{"given":"G.","family":"Lavareda","sequence":"additional","affiliation":[]},{"given":"J.","family":"Valente","sequence":"additional","affiliation":[]},{"given":"F.T.","family":"Nunes","sequence":"additional","affiliation":[]},{"given":"A.","family":"Amaral","sequence":"additional","affiliation":[]},{"given":"C. Nunes","family":"de Carvalho","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2010,7,12]]},"reference":[{"key":"e_1_2_6_2_2","doi-asserted-by":"publisher","DOI":"10.1038\/40087"},{"key":"e_1_2_6_3_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1473667"},{"key":"e_1_2_6_4_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(03)01023-X"},{"key":"e_1_2_6_5_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2991441"},{"key":"e_1_2_6_6_2","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(82)90299-1"},{"key":"e_1_2_6_7_2","doi-asserted-by":"publisher","DOI":"10.1016\/0165-1633(84)90041-8"},{"key":"e_1_2_6_8_2","doi-asserted-by":"publisher","DOI":"10.1016\/0165-1633(79)90030-3"},{"key":"e_1_2_6_9_2","doi-asserted-by":"publisher","DOI":"10.1051\/rphysap:0198000150100152100"},{"key":"e_1_2_6_10_2","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/1\/SB\/071"},{"key":"e_1_2_6_11_2","first-page":"256","volume-title":"Semiconducting Transparent Thin Films","author":"Hartnagel H. L.","year":"1995"},{"key":"e_1_2_6_12_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(03)00190-1"},{"key":"e_1_2_6_13_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2007.12.019"},{"key":"e_1_2_6_14_2","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200700083"}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.200983731","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.200983731","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,16]],"date-time":"2023-10-16T22:43:12Z","timestamp":1697496192000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.200983731"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,7]]},"references-count":13,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2010,7]]}},"alternative-id":["10.1002\/pssa.200983731"],"URL":"https:\/\/doi.org\/10.1002\/pssa.200983731","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,7]]}}}