{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,1]],"date-time":"2025-10-01T15:23:22Z","timestamp":1759332202874},"reference-count":25,"publisher":"Wiley","issue":"7","license":[{"start":{"date-parts":[[2010,6,9]],"date-time":"2010-06-09T00:00:00Z","timestamp":1276041600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2010,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Molybdenum doped indium oxide (IO) thin films were deposited on the Coring F1737 glass substrates at 400\u2009\u00b0C by spray pyrolysis technique. The Mo doping was varied between 0 and 4\u2009at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> with a strongest orientation along (222) for 0.5\u2009at.% Mo, which is shifted to (400) plane when the Mo doping is increased to \u22651.2\u2009at.%. The films deposited with 0.5\u2009at.% Mo showed high mobility of \u223c90\u2009cm<jats:sup>2<\/jats:sup>\/Vs, resistivity of \u223c6.8\u2009\u00d7\u200910<jats:sup>\u22124<\/jats:sup>\u2009\u03a9\u2009cm and carrier concentration of \u223c1.01\u2009\u00d7\u200910<jats:sup>20<\/jats:sup>\u2009cm<jats:sup>\u22123<\/jats:sup> with &gt;\u223c73% transmittance in the visible range between 500 and 800\u2009nm. The transmittance is well extended into near infrared region.<\/jats:p>","DOI":"10.1002\/pssa.200983745","type":"journal-article","created":{"date-parts":[[2010,6,9]],"date-time":"2010-06-09T19:20:00Z","timestamp":1276111200000},"page":"1554-1557","source":"Crossref","is-referenced-by-count":3,"title":["Structural, optical and electrical properties of indium\u2013molybdenum oxide thin films prepared by spray pyrolysis"],"prefix":"10.1002","volume":"207","author":[{"given":"S.","family":"Parthiban","sequence":"first","affiliation":[]},{"given":"E.","family":"Elangovan","sequence":"additional","affiliation":[]},{"given":"K.","family":"Ramamurthi","sequence":"additional","affiliation":[]},{"given":"G.","family":"Goncalves","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2010,7,12]]},"reference":[{"key":"e_1_2_6_2_2","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2007.29"},{"key":"e_1_2_6_3_2","doi-asserted-by":"publisher","DOI":"10.1021\/ja044643g"},{"key":"e_1_2_6_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.371708"},{"key":"e_1_2_6_5_2","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2000.149"},{"key":"e_1_2_6_6_2","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2000.152"},{"key":"e_1_2_6_7_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(01)01142-7"},{"key":"e_1_2_6_8_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2008.05.012"},{"key":"e_1_2_6_9_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.45.L1179"},{"key":"e_1_2_6_10_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2008.08.007"},{"key":"e_1_2_6_11_2","first-page":"45","volume":"5","author":"Elangovan E.","year":"2003","journal-title":"J. Optoelectron. Adv. Mater."},{"key":"e_1_2_6_12_2","unstructured":"Power Diffreaction File JCPDS\u2010international Center for Diffraction Data\u2010ICDD Philadelphia PA Card 06\u20100416 1997."},{"key":"e_1_2_6_13_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2203722"},{"key":"e_1_2_6_14_2","doi-asserted-by":"publisher","DOI":"10.1080\/14786440808561235"},{"key":"e_1_2_6_15_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1646468"},{"key":"e_1_2_6_16_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3142424"},{"key":"e_1_2_6_17_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2005.08.012"},{"key":"e_1_2_6_18_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(01)02161-3"},{"key":"e_1_2_6_19_2","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(83)90256-0"},{"key":"e_1_2_6_20_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.327610"},{"key":"e_1_2_6_21_2","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.2210470139"},{"key":"e_1_2_6_22_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.45.L1179"},{"key":"e_1_2_6_23_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.337534"},{"key":"e_1_2_6_24_2","first-page":"2250","volume":"87","author":"Gonzalez C. G.","year":"2001","journal-title":"J. Appl. Phys."},{"key":"e_1_2_6_25_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(02)00163-3"},{"key":"e_1_2_6_26_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.323240"}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.200983745","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.200983745","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,16]],"date-time":"2023-10-16T22:42:11Z","timestamp":1697496131000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.200983745"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,7]]},"references-count":25,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2010,7]]}},"alternative-id":["10.1002\/pssa.200983745"],"URL":"https:\/\/doi.org\/10.1002\/pssa.200983745","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,7]]}}}