{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,2]],"date-time":"2026-04-02T03:30:53Z","timestamp":1775100653741,"version":"3.50.1"},"reference-count":17,"publisher":"Wiley","issue":"12","license":[{"start":{"date-parts":[[2015,10,26]],"date-time":"2015-10-26T00:00:00Z","timestamp":1445817600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"name":"Brazilian agencies CAPES and CNPq and the French agencies COFECUB and CNRS"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2015,12]]},"abstract":"<jats:sec><jats:label\/><jats:p>Si (100) wafers were implanted at 500\u2009\u00b0C with 250\u2009keV As ions and 350\u2009keV In ions in this order. The implantations were carried out with three different fluences, namely 1\u2009\u00d7\u200910<jats:sup>16<\/jats:sup>, 2\u2009\u00d7\u200910<jats:sup>16<\/jats:sup>, and 5\u2009\u00d7\u200910<jats:sup>16<\/jats:sup>\u2009cm<jats:sup>\u22122<\/jats:sup>. The samples were annealed with rapid thermal annealing (RTA) for 30\u2009s at temperatures ranging from 800 up to 1000\u2009\u00b0C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssa.201532448","type":"journal-article","created":{"date-parts":[[2015,10,26]],"date-time":"2015-10-26T07:30:24Z","timestamp":1445844624000},"page":"2686-2691","source":"Crossref","is-referenced-by-count":8,"title":["Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA"],"prefix":"10.1002","volume":"212","author":[{"given":"Mauricio A.","family":"Sortica","sequence":"first","affiliation":[{"name":"Institut des Nanotechnologies de Lyon INL\u2010UMR5270 INSA \u2013 Lyon, CNRS 7 av. 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