{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,7]],"date-time":"2026-03-07T17:08:49Z","timestamp":1772903329451,"version":"3.50.1"},"reference-count":20,"publisher":"Wiley","issue":"10","license":[{"start":{"date-parts":[[2016,7,4]],"date-time":"2016-07-04T00:00:00Z","timestamp":1467590400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2016,10]]},"abstract":"<jats:sec><jats:label\/><jats:p>The growth of nanocrystalline diamond (NCD) films on Si<jats:sub>3<\/jats:sub>N<jats:sub>4<\/jats:sub> ceramic substrates at low surface temperature using a distributed antenna array plasma\u2010enhanced chemical vapor deposition (PECVD) process is investigated. The advantage of the considered deposition process for keeping a low growth temperature is demonstrated through microwave electric field simulation and comparisons with microwave cavity systems. The suitable design of the low\u2010pressure distributed antenna array reactor thus prevents the ceramic substrate from overheating and consequently from film graphitization. Therefore, for the first time NCD\/Si<jats:sub>3<\/jats:sub>N<jats:sub>4<\/jats:sub> tribosystems are achieved for deposition temperature in the range 250\u2013400\u2009\u00b0C. The nature of the <jats:italic>ex situ<\/jats:italic> pretreatment carried out on Si<jats:sub>3<\/jats:sub>N<jats:sub>4<\/jats:sub> ceramics in order to favor diamond nucleation, as well as temperature variation in the considered range, do not significantly influence the morphology, topography, composition, and microstructure of the NCD films, the characteristics of which remain very close to those of films deposited on Si substrates under the same conditions. Only the growth rate decreases by a factor of two, down to 15\u201317\u2009nm\u2009h<jats:sup>\u22121<\/jats:sup>, when the deposition temperature diminishes from 400 to 250\u2009\u00b0C. This behavior is attributed to an activation energy almost substrate\u2010independent estimated in the range 3.24\u20133.57\u2009kcal\u2009mol<jats:sup>\u22121<\/jats:sup> for the considered low\u2010temperature and low\u2010pressure NCD deposition process using a H<jats:sub>2<\/jats:sub>\/CH<jats:sub>4<\/jats:sub>\/CO<jats:sub>2<\/jats:sub> gas mixture.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssa.201600221","type":"journal-article","created":{"date-parts":[[2016,7,4]],"date-time":"2016-07-04T10:24:46Z","timestamp":1467627886000},"page":"2575-2581","source":"Crossref","is-referenced-by-count":14,"title":["Low\u2010temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system"],"prefix":"10.1002","volume":"213","author":[{"given":"Beno\u00eet","family":"Baudrillart","sequence":"first","affiliation":[{"name":"Universit\u00e9 Paris 13, Sorbonne Paris Cit\u00e9 LSPM\u2010CNRS 99 Avenue Jean\u2010Baptiste Cl\u00e9ment 93430 Villetaneuse France"}]},{"given":"Fabien","family":"B\u00e9n\u00e9dic","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Paris 13, Sorbonne Paris Cit\u00e9 LSPM\u2010CNRS 99 Avenue Jean\u2010Baptiste Cl\u00e9ment 93430 Villetaneuse France"}]},{"given":"Amel S.","family":"Melouani","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Paris 13, Sorbonne Paris Cit\u00e9 LSPM\u2010CNRS 99 Avenue Jean\u2010Baptiste Cl\u00e9ment 93430 Villetaneuse France"}]},{"given":"Filipe J.","family":"Oliveira","sequence":"additional","affiliation":[{"name":"Materials and Ceramic Engineering Department, CICECO University of Aveiro 3810\u2010193 Aveiro Portugal"}]},{"given":"Rui F.","family":"Silva","sequence":"additional","affiliation":[{"name":"Materials and Ceramic Engineering Department, CICECO University of Aveiro 3810\u2010193 Aveiro Portugal"}]},{"given":"Jocelyn","family":"Achard","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Paris 13, Sorbonne Paris Cit\u00e9 LSPM\u2010CNRS 99 Avenue Jean\u2010Baptiste Cl\u00e9ment 93430 Villetaneuse France"}]}],"member":"311","published-online":{"date-parts":[[2016,7,4]]},"reference":[{"key":"e_1_2_5_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0925-9635(02)00135-8"},{"key":"e_1_2_5_3_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2003.11.018"},{"key":"e_1_2_5_4_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2015.04.023"},{"key":"e_1_2_5_5_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2008.08.016"},{"key":"e_1_2_5_6_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2003.10.045"},{"key":"e_1_2_5_7_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2004.11.140"},{"key":"e_1_2_5_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2004.11.113"},{"key":"e_1_2_5_9_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2004.10.023"},{"key":"e_1_2_5_10_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/37\/22\/L01"},{"key":"e_1_2_5_11_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2014.05.004"},{"key":"e_1_2_5_12_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0925-9635(02)00305-9"},{"key":"e_1_2_5_13_1","doi-asserted-by":"publisher","DOI":"10.1107\/S0365110X67000234"},{"key":"e_1_2_5_14_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.200776314"},{"key":"e_1_2_5_15_1","unstructured":"COMSOL Multiphysics\u00ae v. 5.2.www.comsol.com. COMSOL AB Stockholm Sweden."},{"key":"e_1_2_5_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201532276"},{"key":"e_1_2_5_17_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.63.121405"},{"key":"e_1_2_5_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1582352"},{"key":"e_1_2_5_19_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.82.125460"},{"key":"e_1_2_5_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.201200103"},{"key":"e_1_2_5_21_1","volume-title":"Nanodiamonds","author":"Izak T.","year":"2014"}],"container-title":["physica status solidi (a)"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssa.201600221","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssa.201600221","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,5]],"date-time":"2023-10-05T13:11:19Z","timestamp":1696511479000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.201600221"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,7,4]]},"references-count":20,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2016,10]]}},"alternative-id":["10.1002\/pssa.201600221"],"URL":"https:\/\/doi.org\/10.1002\/pssa.201600221","archive":["Portico"],"relation":{},"ISSN":["1862-6300","1862-6319"],"issn-type":[{"value":"1862-6300","type":"print"},{"value":"1862-6319","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,7,4]]}}}