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Vaqueiro\u2010Contreras et al., to appear in PSS RRL). Here, we describe a combination of first\u2010principles calculations and electrical measurements to investigate the composition, structure, electrical activity and recombination mechanism of a carbon\u2010oxygen\u2010hydrogen complex (COH) in Si. We found a defect comprising a carbon\u2010oxygen complex connected to an H atom whose location depends on the charge state of the complex, and showing a calculated acceptor level at <jats:italic>E<\/jats:italic><jats:sub>v\u2009<\/jats:sub>+\u20090.3\u2009eV, a few meV away from the observations.<jats:inline-graphic xmlns:xlink=\"http:\/\/www.w3.org\/1999\/xlink\" xlink:href=\"graphic\/pssa201700309-gra-0001.png\" xlink:title=\"pssa201700309-gra-0001\"\/> Bistable carbon\u2013oxygen\u2013hydrogen complex in silicon. Carbon, oxygen, hydrogen, and silicon atoms are shown in gray, red, black, and white, respectively.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssa.201700309","type":"journal-article","created":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T11:16:39Z","timestamp":1497870999000},"source":"Crossref","is-referenced-by-count":8,"title":["Theory of a carbon\u2010oxygen\u2010hydrogen recombination center in n\u2010type Si"],"prefix":"10.1002","volume":"214","author":[{"given":"Paulo","family":"Santos","sequence":"first","affiliation":[{"name":"Department of Physics and I3N University of Aveiro Campus Santiago 3810\u2010193 Aveiro Portugal"}]},{"given":"Jos\u00e9","family":"Coutinho","sequence":"additional","affiliation":[{"name":"Department of Physics and I3N University of Aveiro Campus Santiago 3810\u2010193 Aveiro Portugal"}]},{"given":"Sven","family":"\u00d6berg","sequence":"additional","affiliation":[{"name":"Department of Engineering Sciences and Mathematics Lule\u00e5 University of Technology SE\u201097187 Lule\u00e5 Sweden"}]},{"given":"Michelle","family":"Vaqueiro\u2010Contreras","sequence":"additional","affiliation":[{"name":"Photon Science Institute University of Manchester M13 9PL UK"}]},{"given":"Vladimir P.","family":"Markevich","sequence":"additional","affiliation":[{"name":"Photon Science Institute University of Manchester M13 9PL UK"}]},{"given":"Matthew P.","family":"Halsall","sequence":"additional","affiliation":[{"name":"Photon Science Institute University of Manchester M13 9PL UK"}]},{"given":"Anthony R.","family":"Peaker","sequence":"additional","affiliation":[{"name":"Photon Science Institute University of Manchester M13 9PL UK"}]}],"member":"311","published-online":{"date-parts":[[2017,6,19]]},"reference":[{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-009-0355-5"},{"key":"e_1_2_7_3_1","doi-asserted-by":"publisher","DOI":"10.1016\/S1359-0286(97)80103-9"},{"key":"e_1_2_7_4_1","first-page":"217","volume-title":"Hydrogen in Si and Ge, in Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals","author":"Estreicher S. 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