{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T04:36:42Z","timestamp":1773808602594,"version":"3.50.1"},"reference-count":41,"publisher":"Wiley","issue":"17","license":[{"start":{"date-parts":[[2019,8,12]],"date-time":"2019-08-12T00:00:00Z","timestamp":1565568000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000266","name":"Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/M024911\/1"],"award-info":[{"award-number":["EP\/M024911\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2019,9]]},"abstract":"<jats:sec><jats:label\/><jats:p>Results available in the literature on minority carrier trapping and light\u2010induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with \u201cdeep\u201d electron traps (J. A. Hornbeck and J. R. Haynes, <jats:italic>Phys. Rev<\/jats:italic>. <jats:bold>1955<\/jats:bold>, <jats:italic>97<\/jats:italic>, 311) and the recently reported results that have linked LID with the transformation of a defect consisting of a substitutional boron atom and an oxygen dimer (B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>) from a configuration with a deep donor state into a recombination active configuration associated with a shallow acceptor state (M. Vaqueiro\u2010Contreras et al., <jats:italic>J. Appl. Phys<\/jats:italic>. <jats:bold>2019<\/jats:bold>, <jats:italic>125<\/jats:italic>, 185704). It is shown that the B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub> complex is a defect with negative\u2010<jats:italic>U<\/jats:italic> properties, and it is responsible for minority carrier trapping and persistent photoconductivity in nondegraded Si:B+O samples and solar cells. It is argued that the \u201cdeep\u201d electron traps observed by Hornbeck and Haynes are the precursors of the \u201cslow\u201d forming shallow acceptor defects, which are responsible for the dominant LID in boron\u2010doped Czochralski silicon (Cz\u2010Si) crystals. Both the deep and shallow defects are B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub> complexes, transformations between charge states and atomic configurations of which account for the observed electron trapping and LID phenomena.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssa.201900315","type":"journal-article","created":{"date-parts":[[2019,7,2]],"date-time":"2019-07-02T15:48:11Z","timestamp":1562082491000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":30,"title":["Boron\u2013Oxygen Complex Responsible for Light\u2010Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem"],"prefix":"10.1002","volume":"216","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2503-6144","authenticated-orcid":false,"given":"Vladimir P.","family":"Markevich","sequence":"first","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Michelle","family":"Vaqueiro-Contreras","sequence":"additional","affiliation":[{"name":"Photovoltaic &amp; Renewable Energy Engineering Tyree Energy Technologies Building UNSW  Sydney NSW 2052 Australia"}]},{"given":"Joyce T.","family":"De Guzman","sequence":"additional","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Jos\u00e9","family":"Coutinho","sequence":"additional","affiliation":[{"name":"Department of Physics and I3N University of Aveiro  Campus Santiago Aveiro 3810-193 Portugal"}]},{"given":"Paulo","family":"Santos","sequence":"additional","affiliation":[{"name":"Department of Physics and I3N University of Aveiro  Campus Santiago Aveiro 3810-193 Portugal"}]},{"given":"Iain F.","family":"Crowe","sequence":"additional","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Matthew P.","family":"Halsall","sequence":"additional","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Ian","family":"Hawkins","sequence":"additional","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Stanislau B.","family":"Lastovskii","sequence":"additional","affiliation":[{"name":"Scientific-Practical Materials Research Center of NAS of Belarus  Minsk 220072 Belarus"}]},{"given":"Leonid I.","family":"Murin","sequence":"additional","affiliation":[{"name":"Scientific-Practical Materials Research Center of NAS of Belarus  Minsk 220072 Belarus"}]},{"given":"Anthony R.","family":"Peaker","sequence":"additional","affiliation":[{"name":"Photon Science Institute and School of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]}],"member":"311","published-online":{"date-parts":[[2019,8,12]]},"reference":[{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.97.311"},{"key":"e_1_2_7_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPHOTOV.2016.2614119"},{"key":"e_1_2_7_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1389076"},{"key":"e_1_2_7_5_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2140584"},{"key":"e_1_2_7_6_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3309869"},{"key":"e_1_2_7_7_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4975685"},{"key":"e_1_2_7_8_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.354461"},{"key":"e_1_2_7_9_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1483908"},{"key":"e_1_2_7_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201700292"},{"key":"e_1_2_7_11_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1663719"},{"key":"e_1_2_7_12_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5011327"},{"key":"e_1_2_7_13_1","doi-asserted-by":"publisher","DOI":"10.1049\/el:19790248"},{"key":"e_1_2_7_14_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1600837"},{"key":"e_1_2_7_15_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5091759"},{"key":"e_1_2_7_16_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1346652"},{"key":"e_1_2_7_17_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2165274"},{"key":"e_1_2_7_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4817910"},{"key":"e_1_2_7_19_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.117723"},{"key":"e_1_2_7_20_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.371186"},{"key":"e_1_2_7_21_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1544431"},{"key":"e_1_2_7_22_1","first-page":"574","volume":"22","author":"Markevich V. 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