{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T15:38:40Z","timestamp":1768405120303,"version":"3.49.0"},"reference-count":37,"publisher":"Wiley","issue":"17","license":[{"start":{"date-parts":[[2022,5,29]],"date-time":"2022-05-29T00:00:00Z","timestamp":1653782400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000266","name":"Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/TO25131\/1"],"award-info":[{"award-number":["EP\/TO25131\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Physica Status Solidi (a)"],"published-print":{"date-parts":[[2022,9]]},"abstract":"<jats:sec><jats:label\/><jats:p>It is debated in the silicon PV community whether or not the presence of hydrogen is essential for the permanent suppression (\u201cregeneration\u201d) of the recombination activity of the boron\u2013oxygen (BO) defect, which is responsible for light\u2010induced degradation (LID) of solar cells produced from B\u2010doped oxygen\u2010rich silicon. The BO\u2010LID defect has been identified as a B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>complex which has negative\u2010<jats:italic>U<\/jats:italic>properties. This study focuses on the interactions of hydrogen with the B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>defect to elucidate the BO\u2010LID regeneration mechanism. With the use of junction spectroscopy techniques, the changes in concentration of the B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>donor state in diodes which are fabricated on Czochralski\u2010grown (Cz) B\u2010doped Si and subjected to hydrogenation and subsequent heat treatments have been monitored. It is found that annealing of the hydrogenated Cz\u2010Si:B diodes in the temperature range 398\u2013448\u2009K under the application of reverse bias (RBA) results in nearly total disappearance of the B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>defect. It is argued that electrically neutral B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>\u2013H complexes have been formed upon the RBA treatments. According to ab initio calculations, the binding energy of H<jats:sup>+<\/jats:sup>to B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub><jats:sup>\u2212<\/jats:sup>exceeds that of H<jats:sup>+<\/jats:sup>to B<jats:sub>s<\/jats:sub><jats:sup>\u2212<\/jats:sup>by at least 0.1\u2009eV, and the resulting B<jats:sub>s<\/jats:sub>O<jats:sub>2<\/jats:sub>\u2013H complexes are electrically inactive.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssa.202200176","type":"journal-article","created":{"date-parts":[[2022,5,13]],"date-time":"2022-05-13T08:19:59Z","timestamp":1652429999000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Interactions of Hydrogen Atoms with Acceptor\u2013Dioxygen Complexes in Czochralski\u2010Grown Silicon"],"prefix":"10.1002","volume":"219","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8734-6706","authenticated-orcid":false,"given":"Tarek O.","family":"Abdul Fattah","sequence":"first","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]},{"given":"Vladimir P.","family":"Markevich","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]},{"given":"Joyce Ann T.","family":"De Guzman","sequence":"additional","affiliation":[{"name":"Philippine Council for Industry, Energy, and Emerging Technology Research and Development Department of Science and Technology (DOST) Taguig City Metro Manila 1631 Philippines"}]},{"given":"Jos\u00e9","family":"Coutinho","sequence":"additional","affiliation":[{"name":"I3N and Department of Physics University of Aveiro 3810-193 Aveiro Portugal"}]},{"given":"Stanislau B.","family":"Lastovskii","sequence":"additional","affiliation":[{"name":"Scientific-Practical Materials Research Center NAS of Belarus Minsk 220072 Belarus"}]},{"given":"Ian D.","family":"Hawkins","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]},{"given":"Iain F.","family":"Crowe","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]},{"given":"Matthew P.","family":"Halsall","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]},{"given":"Anthony R.","family":"Peaker","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK"}]}],"member":"311","published-online":{"date-parts":[[2022,5,29]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.69.024107"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPHOTOV.2016.2614119"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5091759"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201900315"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0076980"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/pip.779"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3517155"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.201600016"},{"key":"e_1_2_9_10_1","unstructured":"K.M\u00fcnzer inProc. 24th Eur. 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