{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,18]],"date-time":"2023-10-18T06:56:06Z","timestamp":1697612166414},"reference-count":10,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2006,3,7]],"date-time":"2006-03-07T00:00:00Z","timestamp":1141689600000},"content-version":"vor","delay-in-days":6,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi (c)"],"published-print":{"date-parts":[[2006,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Using quasi\u2010chemical reaction methods, we calculated concentrations of equilibrium defects for zinc selenide crystals doped with ZnSe\u3008Te\u3009 during the growth process and with ZnSe:Te from the vapour phase. It was found that the main irradiation peak at <jats:italic>\u0127\u03c9<\/jats:italic> <jats:sub><jats:italic>m<\/jats:italic> <\/jats:sub> \u22481.7 eV for ZnSe\u3008Te\u3009 samples is defined with the associates formed by single\u2010charge intrinsic defects \u2013 positive interstitial zinc atoms <jats:styled-content>$ {\\rm Zn}^{\\bullet}_i $<jats:inline-graphic xmlns:xlink=\"http:\/\/www.w3.org\/1999\/xlink\" xlink:href=\"graphic\/tex2gif-ueqn-1.gif\" xlink:title=\"equation image\" \/><\/jats:styled-content>and its negative vacancies <jats:styled-content>$ V_{\\rm Zn}^{\\prime}$<jats:inline-graphic xmlns:xlink=\"http:\/\/www.w3.org\/1999\/xlink\" xlink:href=\"graphic\/tex2gif-ueqn-2.gif\" xlink:title=\"equation image\" \/><\/jats:styled-content>. These vacancies, reaching the concentrations of 10<jats:sup>22<\/jats:sup> cm<jats:sup>\u20133<\/jats:sup> in ZnSe:Te crystals, are also responsible for the luminescence and absorption peaks at the energies of 2.4 eV. (\u00a9 2006 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.200564708","type":"journal-article","created":{"date-parts":[[2006,3,7]],"date-time":"2006-03-07T21:29:37Z","timestamp":1141766977000},"page":"829-832","source":"Crossref","is-referenced-by-count":0,"title":["Peculiarities of defect formation processes in ZnSe crystals with isovalent Te impurity"],"prefix":"10.1002","volume":"3","author":[{"given":"Victor P.","family":"Makhniy","sequence":"first","affiliation":[]},{"given":"Irina V.","family":"Tkachenko","sequence":"additional","affiliation":[]},{"given":"Petro M.","family":"Gorley","sequence":"additional","affiliation":[]},{"given":"Paul P.","family":"Horley","sequence":"additional","affiliation":[]},{"given":"Vitalii K.","family":"Dugaev","sequence":"additional","affiliation":[]},{"given":"Joseph","family":"Barna\u015b","sequence":"additional","affiliation":[]},{"given":"Maria Manuela","family":"Vieira","sequence":"additional","affiliation":[]},{"given":"Witold","family":"Dobrowolski","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2006,3,7]]},"reference":[{"key":"e_1_2_1_2_2","first-page":"1150","volume":"43","author":"Ryzhikov V.D.","year":"1979","journal-title":"Acad. Sci. Bull. SSR, Physics"},{"key":"e_1_2_1_3_2","unstructured":"V.D.Ryzhikov Scintillating crystals of semiconductor compounds AIIBVI: obtaining properties applications (NIIITEHIM Moscow 1986) p. 153."},{"key":"e_1_2_1_4_2","first-page":"1211","volume":"33","author":"Vakulenko O.V.","year":"1997","journal-title":"Phys. Tech. Semicond."},{"key":"e_1_2_1_5_2","first-page":"137","volume":"74","author":"Makhniy V.P.","year":"2004","journal-title":"J. Tech. Phys."},{"key":"e_1_2_1_6_2","unstructured":"V.P.Makhniy M.M.Slyotov andI.V.Tkachenko Obtaining zinc selenide layers with green luminescence Declaration patent #66046A (July 15 2003)."},{"key":"e_1_2_1_7_2","unstructured":"V.P.MakhniyandM.D.Raranskiy Physical and chemical base for formation and analysis of point defects in semiconductors (Ruta Chernivtsi 2003) p. 135."},{"key":"e_1_2_1_8_2","first-page":"34","volume":"133","author":"Makhniy V.P.","year":"2002","journal-title":"Bull. Chernivtsi Natl. Univ., Physics"},{"key":"e_1_2_1_9_2","first-page":"52","volume":"70","author":"Makhniy V.P.","year":"2003","journal-title":"Opt. J."},{"key":"e_1_2_1_10_2","unstructured":"Yu.F.Vaksman Luminescence of zinc selenide crystals and irradiative structures on their base Doctor degree thesis (Odessa 1993)."},{"key":"e_1_2_1_11_2","unstructured":"I.V.Tkachenko Defect formation mechanisms and luminescence in undoped and Te\u2010doped zinc selenide crystals Ph.D. degree thesis (Chernivtsi 2005)."}],"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.200564708","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200564708","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200564708","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,17]],"date-time":"2023-10-17T11:59:21Z","timestamp":1697543961000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.200564708"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2006,3]]},"references-count":10,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2006,3]]}},"alternative-id":["10.1002\/pssc.200564708"],"URL":"https:\/\/doi.org\/10.1002\/pssc.200564708","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2006,3]]}}}