{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,19]],"date-time":"2025-10-19T15:30:43Z","timestamp":1760887843685},"reference-count":12,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2006,3,16]],"date-time":"2006-03-16T00:00:00Z","timestamp":1142467200000},"content-version":"vor","delay-in-days":15,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi (c)"],"published-print":{"date-parts":[[2006,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>In this work we investigated ZnO films grown on semi\u2010insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X\u2010ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C\u2010V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p\u2010type response with a relatively high mobility (\u223c260 cm<jats:sup>2<\/jats:sup>\/V s) and a carrier concentration of \u223c1.8 \u00d7 10<jats:sup>19<\/jats:sup> cm<jats:sup>\u20133<\/jats:sup>. C\u2010V profiling confirmed a p\u2010type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn<jats:sub>2<\/jats:sub>As<jats:sub>2<\/jats:sub>O<jats:sub>7<\/jats:sub>. The results suggest that significant atomic mixing was occurring at the film\/substrate interface for films grown at substrate temperatures of 450 \u00baC (without post\u2010annealing). (\u00a9 2006 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.200564756","type":"journal-article","created":{"date-parts":[[2006,3,16]],"date-time":"2006-03-16T09:48:26Z","timestamp":1142502506000},"page":"1038-1041","source":"Crossref","is-referenced-by-count":15,"title":["Investigations of p\u2010type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition"],"prefix":"10.1002","volume":"3","author":[{"given":"D. J.","family":"Rogers","sequence":"first","affiliation":[]},{"given":"F. Hosseini","family":"Teherani","sequence":"additional","affiliation":[]},{"given":"T.","family":"Monteiro","sequence":"additional","affiliation":[]},{"given":"M.","family":"Soares","sequence":"additional","affiliation":[]},{"given":"A.","family":"Neves","sequence":"additional","affiliation":[]},{"given":"M.","family":"Carmo","sequence":"additional","affiliation":[]},{"given":"S.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"M. 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A.","family":"Prior","sequence":"additional","affiliation":[]},{"given":"P.","family":"Kung","sequence":"additional","affiliation":[]},{"given":"A.","family":"Yasan","sequence":"additional","affiliation":[]},{"given":"M.","family":"Razeghi","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2006,3,16]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(00)00437-1"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/DDF.218-220.17"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1002\/1521-3951(200201)229:2<881::AID-PSSB881>3.0.CO;2-3"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-0248(03)01205-3"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1590423"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1825615"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.3333"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.373643"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.66.073202"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.92.155504"},{"key":"e_1_2_1_12_2","first-page":"1861","volume":"24","author":"Shan F. K.","year":"2004","journal-title":"J. Electrochem. Soc."},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.69.054434"}],"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.200564756","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200564756","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200564756","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,17]],"date-time":"2023-10-17T12:02:02Z","timestamp":1697544122000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.200564756"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2006,3]]},"references-count":12,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2006,3]]}},"alternative-id":["10.1002\/pssc.200564756"],"URL":"https:\/\/doi.org\/10.1002\/pssc.200564756","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2006,3]]}}}