{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T05:14:43Z","timestamp":1694582083875},"reference-count":9,"publisher":"Wiley","issue":"10","license":[{"start":{"date-parts":[[2008,7,23]],"date-time":"2008-07-23T00:00:00Z","timestamp":1216771200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi (c)"],"published-print":{"date-parts":[[2008,8]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This paper reports on a method and a test setup developed to measure the transient dark current and the spectral response characteristics of a\u2010Si:H MIS photosensors. Using this method the segmented\u2010gate\/SiN<jats:sub>x<\/jats:sub>\/a Si:H\/n<jats:sup>+<\/jats:sup>\/ITO structures have been characterized under different biasing conditions. The dependences of the dark and light signals on the refresh pulse amplitude, offset voltage and pulse width were measured and analyzed. It is found that the amplitude of the timedependent component of the leakage current associated with charge trapping at the insulator\u2010semiconductor interface can be significantly reduced by adjusting the offset voltage. The observed bias dependence of the spectral response characteristics is explained by analyzing the charge carrier transport in the absorption layer at different wavelengths of the incident light. (\u00a9 2008 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.200778924","type":"journal-article","created":{"date-parts":[[2008,7,23]],"date-time":"2008-07-23T06:13:15Z","timestamp":1216793595000},"page":"3410-3413","source":"Crossref","is-referenced-by-count":3,"title":["Spectral response characterization of a\u2010Si:H\u2010based MIS\u2010type photosensors"],"prefix":"10.1002","volume":"5","author":[{"given":"M.","family":"Fernandes","sequence":"first","affiliation":[]},{"given":"Y.","family":"Vygranenko","sequence":"additional","affiliation":[]},{"given":"A.","family":"Fantoni","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"M.","family":"Vieira","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,8,4]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"crossref","unstructured":"R. A.Street(Ed.) in: Technology and Applications of Amorphous Silicon (Springer Berlin 2000) pp. 147\u2013221.","DOI":"10.1007\/978-3-662-04141-3_4"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1117\/12.430918"},{"key":"e_1_2_1_4_2","unstructured":"S.Takedet al. Patent US 5591963 Jan. 7 1997."},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.25.5285"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(83)90572-0"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.93822"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.163450"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.363634"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1080\/13642819108205566"}],"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.200778924","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200778924","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200778924","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,12]],"date-time":"2023-09-12T22:54:47Z","timestamp":1694559287000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.200778924"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,8]]},"references-count":9,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2008,8]]}},"alternative-id":["10.1002\/pssc.200778924"],"URL":"https:\/\/doi.org\/10.1002\/pssc.200778924","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2008,8]]}}}