{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T08:10:25Z","timestamp":1693469425973},"reference-count":0,"publisher":"Wiley","issue":"3-4","license":[{"start":{"date-parts":[[2010,2,17]],"date-time":"2010-02-17T00:00:00Z","timestamp":1266364800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi (c)"],"published-print":{"date-parts":[[2010,4]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>High dielectric constant TiO<jats:sub>2<\/jats:sub> thin films are promising for gate insulator in 100\u2010nm microelectronic technology. In this study rutile and anatase phase TiO<jats:sub>2<\/jats:sub> thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by high\u2010resolution Laser Ionization Mass Spectrometry (LIMS) and by X\u2010ray Photoemission Spectroscopy (XPS). Crystal structure was studied by (XRD). Silicon based Metal\u2010Insulator semiconductor (MIS) capacitors formed on the high\u2010k dielectric TiO<jats:sub>2<\/jats:sub>were fabricated and characterized using small signal impedance studies as function of frequency and current vs voltage measurements. As it was shown from I\u2013V characteristics, the Shockley equation adequately describes the conductivity mechanism in low field region. By analysis of I\u2013V characteristics it was also found that there is change in carrier conduction mechanism from Shockley regime to the nonlinear Frenkel\u2013Poole mechanism. (\u00a9 2010 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.200982713","type":"journal-article","created":{"date-parts":[[2010,2,17]],"date-time":"2010-02-17T13:00:10Z","timestamp":1266411610000},"page":"949-952","source":"Crossref","is-referenced-by-count":2,"title":["Electrical properties of thin\u2010films wide\u2010band gap semiconductor TiO<sub>2<\/sub> prepared by CVD"],"prefix":"10.1002","volume":"7","author":[{"given":"V.","family":"Bessergenev","sequence":"first","affiliation":[]},{"given":"H. L.","family":"Gomes","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2010,3,23]]},"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.200982713","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200982713","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200982713","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,30]],"date-time":"2023-08-30T05:01:03Z","timestamp":1693371663000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.200982713"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,3,23]]},"references-count":0,"journal-issue":{"issue":"3-4","published-print":{"date-parts":[[2010,4]]}},"alternative-id":["10.1002\/pssc.200982713"],"URL":"https:\/\/doi.org\/10.1002\/pssc.200982713","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,3,23]]}}}