{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T08:06:46Z","timestamp":1772179606767,"version":"3.50.1"},"reference-count":0,"publisher":"Wiley","issue":"3-4","license":[{"start":{"date-parts":[[2010,1,21]],"date-time":"2010-01-21T00:00:00Z","timestamp":1264032000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi (c)"],"published-print":{"date-parts":[[2010,4]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Cu<jats:sub>2<\/jats:sub>ZnSnSe<jats:sub>4<\/jats:sub> (CZTSe) is a p\u2010type semiconductor with a high absorption coefficient, 10<jats:sup>4<\/jats:sup> to 10<jats:sup>5<\/jats:sup> cm<jats:sup>\u20101<\/jats:sup>, and is being seen as a possible replacement for Cu(In,Ga)Se<jats:sub>2<\/jats:sub> in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N<jats:sub>2<\/jats:sub>. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM\/EDS, Raman scattering and XRD. (\u00a9 2010 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.200982748","type":"journal-article","created":{"date-parts":[[2010,1,21]],"date-time":"2010-01-21T10:23:23Z","timestamp":1264069403000},"page":"913-916","source":"Crossref","is-referenced-by-count":36,"title":["Influence of selenization pressure on the growth of Cu<sub>2<\/sub>ZnSnSe<sub>4<\/sub> films from stacked metallic layers"],"prefix":"10.1002","volume":"7","author":[{"given":"P. M. P.","family":"Salom\u00e9","sequence":"first","affiliation":[]},{"given":"P. A.","family":"Fernandes","sequence":"additional","affiliation":[]},{"given":"A. F. da","family":"Cunha","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2010,3,23]]},"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.200982748","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200982748","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.200982748","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,30]],"date-time":"2023-08-30T05:02:24Z","timestamp":1693371744000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.200982748"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,3,23]]},"references-count":0,"journal-issue":{"issue":"3-4","published-print":{"date-parts":[[2010,4]]}},"alternative-id":["10.1002\/pssc.200982748"],"URL":"https:\/\/doi.org\/10.1002\/pssc.200982748","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,3,23]]}}}