{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,20]],"date-time":"2025-12-20T22:04:26Z","timestamp":1766268266230},"reference-count":0,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2014,1,20]],"date-time":"2014-01-20T00:00:00Z","timestamp":1390176000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Phys. Status Solidi C"],"published-print":{"date-parts":[[2014,2]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Sequential multiple Eu ion implantations at low fluence (1\u00d710<jats:sup>13<\/jats:sup> cm<jats:sup>\u20102<\/jats:sup> at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 \u00b0C or 1100 \u00b0C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation\/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu<jats:sup>3+<\/jats:sup> ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 \u00b0C. After HTHP annealing the main room temperature cathodo\u2010 and photoluminescence line in Mg\u2010doped samples lies at \u223c 619 nm, characteristic of a known Mg\u2010related Eu<jats:sup>3+<\/jats:sup> centre, while after RTA treatment the dominant line lies at \u223c 622 nm, typical for undoped GaN:Eu. (\u00a9 2014 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssc.201300210","type":"journal-article","created":{"date-parts":[[2014,1,20]],"date-time":"2014-01-20T10:56:32Z","timestamp":1390215392000},"page":"253-257","source":"Crossref","is-referenced-by-count":9,"title":["Sequential multiple\u2010step europium ion implantation and annealing of GaN"],"prefix":"10.1002","volume":"11","author":[{"given":"S. M. C.","family":"Miranda","sequence":"first","affiliation":[]},{"given":"P. R.","family":"Edwards","sequence":"additional","affiliation":[]},{"given":"K. P.","family":"O'Donnell","sequence":"additional","affiliation":[]},{"given":"M.","family":"Bo\u0107kowski","sequence":"additional","affiliation":[]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"I. S.","family":"Roqan","sequence":"additional","affiliation":[]},{"given":"A.","family":"Vantomme","sequence":"additional","affiliation":[]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2014,1,20]]},"container-title":["physica status solidi c"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssc.201300210","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.201300210","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssc.201300210","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T17:12:17Z","timestamp":1694625137000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.201300210"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,1,20]]},"references-count":0,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2014,2]]}},"alternative-id":["10.1002\/pssc.201300210"],"URL":"https:\/\/doi.org\/10.1002\/pssc.201300210","archive":["Portico"],"relation":{},"ISSN":["1862-6351","1610-1642"],"issn-type":[{"value":"1862-6351","type":"print"},{"value":"1610-1642","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014,1,20]]}}}